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MS4559

Public Made by Adom

by adom

MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MS4559

MSKSEMI · MOSFETs · SOP-8

MS4559 from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1); N-channel VDS is 60 V and continuous ID is 4.8 A at TA=25℃.
2 G1 input Gate of the N-channel MOSFET (Q1); VGS maximum is ±20 V with a threshold of 1.2 to 2.5 V.
3 S2 passive Source of the P-channel MOSFET (Q2); P-channel VDS is -60 V and continuous ID is -3.7 A at TA=25℃.
4 G2 input Gate of the P-channel MOSFET (Q2); VGS maximum is ±20 V with a threshold of -1.2 to -2.5 V.
5 D2 passive Drain of the P-channel MOSFET (Q2), shorted to pins 6 externally on the package outline; pulsed drain current is -7.5 A.
6 D2 passive Drain of the P-channel MOSFET (Q2); drain-source voltage rating is -60 V.
7 D1 passive Drain of the N-channel MOSFET (Q1); drain-source voltage rating is 60 V.
8 D1 passive Drain of the N-channel MOSFET (Q1); pulsed drain current is 9.6 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-channel Drain-Source Voltage VDS 60 V 2
P-channel Drain-Source Voltage VDS -60 V 2
N-channel Gate-Source Voltage VGS -20 20 V 2
P-channel Gate-Source Voltage VGS -20 20 V 2
N-channel Continuous Drain Current ID@TA=25℃ 4.8 A TA=25℃, VGS @ 10V 2
P-channel Continuous Drain Current ID@TA=25℃ -3.7 A TA=25℃, VGS @ 10V 2
N-channel Continuous Drain Current ID@TA=70℃ 3.8 A TA=70℃, VGS @ 10V 2
P-channel Continuous Drain Current ID@TA=70℃ -3 A TA=70℃, VGS @ 10V 2
N-channel Pulsed Drain Current IDM 9.6 A 2
P-channel Pulsed Drain Current IDM -7.5 A 2
N-channel Single Pulse Avalanche Energy EAS 25.5 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A 2
P-channel Single Pulse Avalanche Energy EAS 35.3 mJ Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A 2
N-channel Avalanche Current IAS 22.6 A 2
P-channel Avalanche Current IAS -26.6 A 2
Total Power Dissipation (shared N and P rating) PD@TA=25℃ 1.5 W TA=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 2
Thermal Resistance Junction-Case RθJC 36 ℃/W 2
N-channel Continuous Source Current IS 4.8 A VG=VD=0V, Force Current 3
N-channel Pulsed Source Current ISM 9.6 A 3
N-channel Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 3
P-channel Continuous Source Current IS -3.7 A VG=VD=0V, Force Current 4
P-channel Pulsed Source Current ISM -7.5 A 4
P-channel Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 4
N-channel Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
N-channel Static Drain-Source On-Resistance RDS(ON) 65 80 mΩ VGS=10V, ID=4A 3
N-channel Static Drain-Source On-Resistance RDS(ON) 75 95 mΩ VGS=4.5V, ID=2A 3
N-channel Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 3
N-channel Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 3
N-channel Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 3
N-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-channel Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 4
P-channel Static Drain-Source On-Resistance RDS(ON) 75 90 mΩ VGS=-10V, ID=-3A 4
P-channel Static Drain-Source On-Resistance RDS(ON) 90 125 mΩ VGS=-4.5V, ID=-2A 4
P-channel Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS, ID=-250uA 4
P-channel Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 4
P-channel Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 4
P-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 4

CAD (KiCad official)

  • Symbol: MS4559
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ms4559-etched.step / ms4559-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms4559.step / ms4559.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (10 pp, sha256 ce9972434b5600dd, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF