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Generated by kicad-footprint-generator · KiCad file format 20260206

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MS16N65S

MSKSEMI · MOSFETs · TO-263

MS16N65S from MSKSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; gate-source voltage is rated ±30 V (VGS), and the device is described as operating with gate voltages as low as 4.5 V.
2	D	passive	Drain terminal; drain-source voltage is rated 650 V (VDS) with continuous drain current of 16 A (ID).
3	S	passive	Source terminal; reference for the gate-source rating of ±30 V and the body-diode forward voltage of 1.5 V max at IS = 16 A, VGS = 0 V.

Key specifications

Parameter	Value
Manufacturer	MSKSEMI
Package	TO-263
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			650	V		2
Gate-Source Voltage	VGS	-30		30	V		2
Drain Current-Continuous	ID			16	A		2
Drain Current-Pulsed	IDM			64	A	Pulsed (note a)	2
Maximum Power Dissipation	PD			180	W	TC = 25°C	2
Single Pulsed Avalanche Energy	EAS			1000	mJ	Note d	2
Single Pulsed Avalanche Current	IAS			64	A	Note d	2
Operating and Store Temperature Range	TJ,Tstg	-55		175	°C		2
Derating above 25°C	PD			1.1	W/°C	Derate above 25°C	2
Thermal Resistance, Junction-to-Case	RθJC			0.69	°C/W		2
Thermal Resistance, Junction-to-Ambient	RθJA			62.5	°C/W		2
Drain-to-Source Breakdown Voltage	BVDSS	650			V	VGS=0V, ID=250uA	3
Drain-to-Source Leakage Current	IDSS			1	uA	VDS=650V, VGS=0V	3
Drain-to-Source Leakage Current	IDSS			100	uA	VDS=520V, VGS=0V, TJ=125℃	3
Gate-to-Source Leakage Current (positive bias)	IGSS			100	nA	VGS=+30V, VDS=0V	3
Gate-to-Source Leakage Current (negative bias)	IGSS	-100			nA	VGS=-30V, VDS=0V	3
Static Drain-to-Source On-Resistance	RDS(ON)		0.45	0.55	Ω	VGS=10V, ID=8A	3
Gate Threshold Voltage	VGS(TH)	2		4	V	VDS=VGS, ID=250uA	3
Continuous Source Current	ISD			16	A	Integral PN-diode in MOSFET	3
Pulsed Source Current	ISM			64	A	Integral PN-diode in MOSFET	3
Diode Forward Voltage	VSD			1.5	V	IS=16A, VGS=0V	3

CAD (KiCad official)

Symbol: MS16N65S
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: TO-263 (KiCad packages3D, STEP)
3D model files: ms16n65s-etched.step / ms16n65s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms16n65s.step / ms16n65s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: MSKSEMI datasheet (10 pp, sha256 f0fb507101aef6bf, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF