component
MS16N65S
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMS16N65S
MSKSEMI · MOSFETs · TO-263
MS16N65S from MSKSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V (VGS), and the device is described as operating with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 650 V (VDS) with continuous drain current of 16 A (ID). |
| 3 | S | passive | Source terminal; reference for the gate-source rating of ±30 V and the body-diode forward voltage of 1.5 V max at IS = 16 A, VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 2 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 2 | ||
| Drain Current-Continuous | ID | 16 | A | 2 | |||
| Drain Current-Pulsed | IDM | 64 | A | Pulsed (note a) | 2 | ||
| Maximum Power Dissipation | PD | 180 | W | TC = 25°C | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1000 | mJ | Note d | 2 | ||
| Single Pulsed Avalanche Current | IAS | 64 | A | Note d | 2 | ||
| Operating and Store Temperature Range | TJ,Tstg | -55 | 175 | °C | 2 | ||
| Derating above 25°C | PD | 1.1 | W/°C | Derate above 25°C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.69 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 2 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=650V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=520V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-to-Source Leakage Current (positive bias) | IGSS | 100 | nA | VGS=+30V, VDS=0V | 3 | ||
| Gate-to-Source Leakage Current (negative bias) | IGSS | -100 | nA | VGS=-30V, VDS=0V | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.45 | 0.55 | Ω | VGS=10V, ID=8A | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 3 | |
| Continuous Source Current | ISD | 16 | A | Integral PN-diode in MOSFET | 3 | ||
| Pulsed Source Current | ISM | 64 | A | Integral PN-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IS=16A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
MS16N65S - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ms16n65s-etched.step/ms16n65s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms16n65s.step/ms16n65s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (10 pp, sha256
f0fb507101aef6bf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).