component
MS10N100HGC0
Public Made by Adomby adom
MASPOWER MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| ms10n100hgc0-etched.glb | 2h ago |
| ms10n100hgc0-etched.step | 2h ago |
| ms10n100hgc0-hero.glb | 2h ago |
| ms10n100hgc0-hero.overlay.json | 2h ago |
| ms10n100hgc0.glb | 2h ago |
| ms10n100hgc0.kicad_mod | 2h ago |
| ms10n100hgc0.kicad_sym | 2h ago |
| ms10n100hgc0.lbr | 2h ago |
| ms10n100hgc0.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
| verification.json | 2h ago |
MS10N100HGC0
MASPOWER · MOSFETs · TO-247
MS10N100HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; continuous gate-source voltage ±20 V (transient ±30 V), threshold 2.25 V min to 4.40 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain; drain-source voltage 1000 V max, continuous drain current 10 A at TC=25℃ (pulsed 36 A). |
| 3 | S | passive | Source; continuous body-diode forward current 10 A (pulsed 36 A) and return path for the 10 A drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MASPOWER |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1000 | V | 1 | |||
| Transient Gate-Source Voltage | VGSM | -30 | 30 | V | 1 | ||
| Continuous Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current -continuous | ID | 10 | A | TC=25℃ | 1 | ||
| Drain Current -continuous | ID | 6 | A | TC=100℃ | 1 | ||
| Drain Current - pulse | IDM | 36 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 858 | mJ | 1 | |||
| Avalanche Current | IAR | 10 | A | 1 | |||
| Repetitive Avalanche Current | EAR | 27.7 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 4.1 | V/ns | 1 | |||
| Power Dissipation (TO-247/TO-263) | PD | 186.5 | W | 1 | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ℃ | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 1000 | V | ID=250uA,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | 1 | uA | VDS=900V,VGS=0V,TC=25℃ | 2 | |||
| Zero Gate Voltage Drain Current | 10 | uA | VDS=720V,TC=125℃ | 2 | |||
| Gate-body leakage current, forward | IGSSF | 100 | nA | VDS=0V,VGS=20V | 2 | ||
| Gate-body leakage current, reverse | IGSSR | -100 | nA | VDS=0V,VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.25 | 3.3 | 4.4 | V | VDS=VGS,ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.45 | 1.95 | Ω | VGS=10V,ID=1A 25℃ | 2 | |
| Gate resistance | Rg | 0.5 | 3 | Ω | F=1.0MHz open drain | 2 | |
| Input capacitance | Ciss | 1200 | 2150 | 2830 | pF | VDS=25V, VGS=0V, F=1.0MHz | 2 |
| Output capacitance | Coss | 100 | 189 | 246 | pF | 2 | |
| Reverse transfer capacitance | Crss | 5 | 13 | 17 | pF | 2 | |
| Turn-On delay time | td(on) | 53 | 121 | ns | VDD=450V,ID=9A, RG=25Ω(note 4,5) | 2 | |
| Turn-On rise time | tr | 116 | 235 | ns | 2 | ||
| Turn-Off delay time | td(off) | 97 | 199 | ns | 2 | ||
| Turn-Off Fall time | tf | 69 | 171 | ns | 2 | ||
| Total Gate Charge | Qg | 43 | 56 | nC | VDS=720V,ID=9A, VGS=10V(note4,5) | 2 | |
| Gate-Source charge | Qgs | 15 | 40 | nC | 2 | ||
| Gate-Drain charge | Qgd | 21 | 50 | nC | 2 | ||
| Continuous Drain-Source Diode Forward Current | IS | 10 | A | 2 | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.72 | 1.2 | V | VGS=0V,IS=1A | 3 | |
| Reverse recovery time | trr | 539 | 1200 | ns | VGS=0V,IS=9A dIF/dt=100A/us(note 4) | 3 | |
| Reverse recovery charge | Qrr | 6.41 | 12 | uC | 3 | ||
| Thermal Resistance, Junction to Case, Max (TO-247) | Rth(j-c) | 0.67 | ℃/W | 3 | |||
| Thermal Resistance, Junction to Ambient, Max (TO-247) | Rth(j-A) | 40 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
MS10N100HGC0 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ms10n100hgc0-etched.step/ms10n100hgc0-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms10n100hgc0.step/ms10n100hgc0.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MASPOWER datasheet (10 pp, sha256
1643ba25e8cf48e1, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).