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Contents

README

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MS10N100HGC0

MASPOWER · MOSFETs · TO-247

MS10N100HGC0 from MASPOWER, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; continuous gate-source voltage ±20 V (transient ±30 V), threshold 2.25 V min to 4.40 V max at VDS=VGS, ID=250 µA.
2 D passive Drain; drain-source voltage 1000 V max, continuous drain current 10 A at TC=25℃ (pulsed 36 A).
3 S passive Source; continuous body-diode forward current 10 A (pulsed 36 A) and return path for the 10 A drain current.

Key specifications

Parameter Value
Manufacturer MASPOWER
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 1000 V 1
Transient Gate-Source Voltage VGSM -30 30 V 1
Continuous Gate-Source Voltage VGSS -20 20 V 1
Drain Current -continuous ID 10 A TC=25℃ 1
Drain Current -continuous ID 6 A TC=100℃ 1
Drain Current - pulse IDM 36 A 1
Single Pulsed Avalanche Energy EAS 858 mJ 1
Avalanche Current IAR 10 A 1
Repetitive Avalanche Current EAR 27.7 mJ 1
Peak Diode Recovery dv/dt dv/dt 4.1 V/ns 1
Power Dissipation (TO-247/TO-263) PD 186.5 W 1
Operating and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Maximum Lead Temperature for Soldering Purposes TL 300 ℃ 1
Drain-Source Breakdown Voltage BVDSS 1000 V ID=250uA,VGS=0V 2
Zero Gate Voltage Drain Current 1 uA VDS=900V,VGS=0V,TC=25℃ 2
Zero Gate Voltage Drain Current 10 uA VDS=720V,TC=125℃ 2
Gate-body leakage current, forward IGSSF 100 nA VDS=0V,VGS=20V 2
Gate-body leakage current, reverse IGSSR -100 nA VDS=0V,VGS=20V 2
Gate Threshold Voltage VGS(th) 2.25 3.3 4.4 V VDS=VGS,ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 1.45 1.95 Ω VGS=10V,ID=1A 25℃ 2
Gate resistance Rg 0.5 3 Ω F=1.0MHz open drain 2
Input capacitance Ciss 1200 2150 2830 pF VDS=25V, VGS=0V, F=1.0MHz 2
Output capacitance Coss 100 189 246 pF 2
Reverse transfer capacitance Crss 5 13 17 pF 2
Turn-On delay time td(on) 53 121 ns VDD=450V,ID=9A, RG=25Ω(note 4,5) 2
Turn-On rise time tr 116 235 ns 2
Turn-Off delay time td(off) 97 199 ns 2
Turn-Off Fall time tf 69 171 ns 2
Total Gate Charge Qg 43 56 nC VDS=720V,ID=9A, VGS=10V(note4,5) 2
Gate-Source charge Qgs 15 40 nC 2
Gate-Drain charge Qgd 21 50 nC 2
Continuous Drain-Source Diode Forward Current IS 10 A 2
Pulsed Drain-Source Diode Forward Current ISM 36 A 2
Drain-Source Diode Forward Voltage VSD 0.72 1.2 V VGS=0V,IS=1A 3
Reverse recovery time trr 539 1200 ns VGS=0V,IS=9A dIF/dt=100A/us(note 4) 3
Reverse recovery charge Qrr 6.41 12 uC 3
Thermal Resistance, Junction to Case, Max (TO-247) Rth(j-c) 0.67 ℃/W 3
Thermal Resistance, Junction to Ambient, Max (TO-247) Rth(j-A) 40 ℃/W 3

CAD (KiCad official)

  • Symbol: MS10N100HGC0
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ms10n100hgc0-etched.step / ms10n100hgc0-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms10n100hgc0.step / ms10n100hgc0.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MASPOWER datasheet (10 pp, sha256 1643ba25e8cf48e1, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF