component
MS0009B
Public Made by Adomby adom
miracle MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MS0009B
miracle · MOSFETs · TO-263
MS0009B from miracle, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20V and a typical threshold of 3.0V (2.0V to 4.0V) at ID = 250μA. |
| 2 | D | passive | Drain, also connected to the mounting tab; rated for 100V VDS and 135A continuous current at TC = 25°C. |
| 3 | S | passive | Source; carries the 135A continuous drain current at TC = 25°C and is the body-diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 4.4 | 5.8 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 135 | A | VG = VD = 0V, Force Current | 2 | ||
| Maximum Pulsed Current | ISM | 540 | A | VG = VD = 0V, Force Current | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 20A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TJ = +25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc = 25°C | 1 | |
| Drain Current-Continuous | ID | 135 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 85 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 540 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 179 | W | TC = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 506 | mJ | L = 0.5mH, VDD = 25V, IAS = 45A, RG = 25Ω Starting TJ = 25 ℃ | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.7 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 46 | °C/W | 1 | |||
| Gate Resistance | RG | 4.2 | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 3675 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 578 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 19 | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 25 | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-On Rise Time | tr | 41 | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 78 | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-Off Fall Time | tf | 24 | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Total Gate Charge | Qg | 46 | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Source Charge | Qgs | 16.5 | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Drain Charge | Qgd | 14.5 | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 46.3 | ns | IF = 20A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 350 | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MS0009B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ms0009b-etched.step/ms0009b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ms0009b.step/ms0009b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (6 pp, sha256
c5c1e07359e859c6, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MS0009B
**miracle** · MOSFETs · TO-263
MS0009B from miracle, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20V and a typical threshold of 3.0V (2.0V to 4.0V) at ID = 250μA. |
| 2 | D | passive | Drain, also connected to the mounting tab; rated for 100V VDS and 135A continuous current at TC = 25°C. |
| 3 | S | passive | Source; carries the 135A continuous drain current at TC = 25°C and is the body-diode anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 1 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 4.4 | 5.8 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source Diode Forward Continuous Current | IS | | | 135 | A | VG = VD = 0V, Force Current | 2 |
| Maximum Pulsed Current | ISM | | | 540 | A | VG = VD = 0V, Force Current | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 20A | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | TJ = +25 ℃ to +150 ℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Tc = 25°C | 1 |
| Drain Current-Continuous | ID | | | 135 | A | TC = 25°C | 1 |
| Drain Current-Continuous | ID | | | 85 | A | TC = 100°C | 1 |
| Drain Current-Pulsed | IDM | | | 540 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 179 | W | TC = 25°C | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 506 | mJ | L = 0.5mH, VDD = 25V, IAS = 45A, RG = 25Ω Starting TJ = 25 ℃ | 1 |
| Operating and Store Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.7 | °C/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 46 | °C/W | | 1 |
| Gate Resistance | RG | | 4.2 | | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 |
| Input Capacitance | Ciss | | 3675 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 578 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 19 | | pF | VDS = 50V, VGS = 0V, f = 1.0MHz | 2 |
| Turn-On Delay Time | td(on) | | 25 | | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 |
| Turn-On Rise Time | tr | | 41 | | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 |
| Turn-Off Delay Time | td(off) | | 78 | | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 |
| Turn-Off Fall Time | tf | | 24 | | ns | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 |
| Total Gate Charge | Qg | | 46 | | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Source Charge | Qgs | | 16.5 | | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 |
| Gate-Drain Charge | Qgd | | 14.5 | | nC | VDS = 50V, VGS = 0 to 10V, ID = 20A | 2 |
| Body Diode Reverse Recovery Time | Trr | | 46.3 | | ns | IF = 20A, dIF/dt = 100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 350 | | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `MS0009B`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ms0009b-etched.step` / `ms0009b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ms0009b.step` / `ms0009b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [miracle datasheet](docs/ms0009b-datasheet.pdf) (6 pp, sha256 `c5c1e07359e859c6`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ms0009b-datasheet.pdf)