component

MS0009B

Public Made by Adom

by adom

miracle MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ms0009b-hero.glb ms0009b: hero GLB from the etched model (keeps the MPN mark) · Ray 6h ago
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MS0009B

miracle · MOSFETs · TO-263

MS0009B from miracle, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20V and a typical threshold of 3.0V (2.0V to 4.0V) at ID = 250μA.
2 D passive Drain, also connected to the mounting tab; rated for 100V VDS and 135A continuous current at TC = 25°C.
3 S passive Source; carries the 135A continuous drain current at TC = 25°C and is the body-diode anode.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 4.4 5.8 mΩ VGS = 10V, ID = 20A 2
Drain-Source Diode Forward Continuous Current IS 135 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current ISM 540 A VG = VD = 0V, Force Current 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 20A 2
Drain-Source Voltage VDS 100 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V Tc = 25°C 1
Drain Current-Continuous ID 135 A TC = 25°C 1
Drain Current-Continuous ID 85 A TC = 100°C 1
Drain Current-Pulsed IDM 540 A Repetitive rating: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 179 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 506 mJ L = 0.5mH, VDD = 25V, IAS = 45A, RG = 25Ω Starting TJ = 25 ℃ 1
Operating and Store Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.7 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 46 °C/W 1
Gate Resistance RG 4.2 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 3675 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 578 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 19 pF VDS = 50V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 25 ns VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-On Rise Time tr 41 ns VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-Off Delay Time td(off) 78 ns VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-Off Fall Time tf 24 ns VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Total Gate Charge Qg 46 nC VDS = 50V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 16.5 nC VDS = 50V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 14.5 nC VDS = 50V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 46.3 ns IF = 20A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 350 nC IF = 20A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MS0009B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ms0009b-etched.step / ms0009b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms0009b.step / ms0009b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 c5c1e07359e859c6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF