# MPT037N08

**Minos** · MOSFETs · TO-263

MPT037N08 from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, connected to the metal tab; drain-source voltage is rated 85 V with continuous current of 185 A silicon limited and 120 A package limited. |
| 3 | S | passive | Source; continuous source (body diode) current is 120 A max and pulsed 480 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 85 | V |  | 1 |
| Continuous Drain Current, Silicon Limited | ID |  |  | 185 | A |  | 1 |
| Continuous Drain Current, Package Limited | ID |  |  | 120 | A |  | 1 |
| Continuous Drain Current, Silicon Limited | ID |  |  | 117.2 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 480 | A | Note1 | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Avalanche Energy | EAS |  |  | 240.2 | mJ | L=0.5mH, Ias=35A, Start TJ =25℃ | 1 |
| Power Dissipation | PD |  |  | 208.3 | W |  | 2 |
| Operating Junction Temperature | TJ |  |  | 150 | ℃ |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Maximum Temperature for Soldering | TL |  |  | 260 | ℃ |  | 2 |
| Thermal resistance, Junction-Case | RθJC |  |  | 0.5 | ℃/W |  | 2 |
| Thermal resistance, Junction-Ambient | RθJA |  |  | 62.5 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | 95 |  | V | VGS=0V, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=100V, VGS=0V | 2 |
| Drain-Source Leakage Current @TC=125°C | IDSS |  |  | 100 | µA | VDS=80V, VGS=0V, @TC=125°C | 2 |
| Gate-Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS=+20V | 2 |
| Gate-Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS=-20V | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 3 | 3.7 | mΩ | VGS=10V, ID=50A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current | IS |  |  | 120 | A |  | 3 |
| Maximum Pulsed Current | ISM |  |  | 480 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=50A | 3 |

## CAD (KiCad official)

- Symbol: `MPT037N08`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `mpt037n08-etched.step` / `mpt037n08-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpt037n08.step` / `mpt037n08.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Minos datasheet](docs/mpt037n08-datasheet.pdf) (11 pp, sha256 `5d13eae2c6c9d355`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mpt037n08-datasheet.pdf)