component
MPT037N08
Public Made by Adomby adom
Minos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| mpt037n08-etched.glb | 1d ago |
| mpt037n08-etched.step | 1d ago |
| mpt037n08-hero.glb | 1d ago |
| mpt037n08-hero.overlay.json | 1d ago |
| mpt037n08.glb | 1d ago |
| mpt037n08.kicad_mod | 1d ago |
| mpt037n08.kicad_sym | 1d ago |
| mpt037n08.lbr | 1d ago |
| mpt037n08.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
MPT037N08
Minos · MOSFETs · TO-263
MPT037N08 from Minos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, connected to the metal tab; drain-source voltage is rated 85 V with continuous current of 185 A silicon limited and 120 A package limited. |
| 3 | S | passive | Source; continuous source (body diode) current is 120 A max and pulsed 480 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 85 | V | 1 | |||
| Continuous Drain Current, Silicon Limited | ID | 185 | A | 1 | |||
| Continuous Drain Current, Package Limited | ID | 120 | A | 1 | |||
| Continuous Drain Current, Silicon Limited | ID | 117.2 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | Note1 | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Avalanche Energy | EAS | 240.2 | mJ | L=0.5mH, Ias=35A, Start TJ =25℃ | 1 | ||
| Power Dissipation | PD | 208.3 | W | 2 | |||
| Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 260 | ℃ | 2 | |||
| Thermal resistance, Junction-Case | RθJC | 0.5 | ℃/W | 2 | |||
| Thermal resistance, Junction-Ambient | RθJA | 62.5 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | 95 | V | VGS=0V, ID=250µA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Drain-Source Leakage Current @TC=125°C | IDSS | 100 | µA | VDS=80V, VGS=0V, @TC=125°C | 2 | ||
| Gate-Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V | 2 | ||
| Gate-Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 3 | 3.7 | mΩ | VGS=10V, ID=50A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current | IS | 120 | A | 3 | |||
| Maximum Pulsed Current | ISM | 480 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=50A | 3 |
CAD (KiCad official)
- Symbol:
MPT037N08 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
mpt037n08-etched.step/mpt037n08-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpt037n08.step/mpt037n08.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (11 pp, sha256
5d13eae2c6c9d355, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).