# MPS8550S-D-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

MPS8550S-D-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives VEBO of -5 V and a base-emitter saturation voltage of -1.2 V max at IC=-800mA, IB=-80mA. |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base voltage limit is -5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCBO -40 V, VCEO -25 V, continuous collector current -1.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | -40 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | -25 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector Current | IC |  |  | -1.5 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 300 | mW |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  |  | 417 | °C/W |  | 1 |
| Junction Temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -40 |  |  | V | IC=-100µA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -25 |  |  | V | IC=-0.1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-100µA, IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | -100 | nA | VCB=-40V, IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | -100 | nA | VEB=-5V, IC=0 | 2 |
| DC current gain | hFE(1) | 200 |  | 350 |  | VCE=-1V, IC=-100mA | 2 |
| DC current gain | hFE(2) | 40 |  |  |  | VCE=-1V, IC=-800mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.5 | V | IC=-800mA, IB=-80mA | 2 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.2 | V | IC=-800mA, IB=-80mA | 2 |
| Base-emitter voltage | VBE |  |  | -1 | V | VCE=-1V, IC=-10mA | 2 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-10V, IC=-50mA, f=30MHz | 2 |
| Collector output capacitance | Cob |  |  | 20 | pF | VCB=-10V, IE=0, f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `MPS8550S-D-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mps8550s-d-hxy-etched.step` / `mps8550s-d-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mps8550s-d-hxy.step` / `mps8550s-d-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604447212038602752) (5 pp, sha256 `b54d68de723d8a01`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mps8550s-d-hxy-datasheet.pdf)