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MPS8550S-D-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MPS8550S-D-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

MPS8550S-D-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -5 V and a base-emitter saturation voltage of -1.2 V max at IC=-800mA, IB=-80mA.
2 E passive Emitter of the PNP transistor; emitter-base voltage limit is -5 V.
3 C passive Collector of the PNP transistor; VCBO -40 V, VCEO -25 V, continuous collector current -1.5 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V 1
Collector-Emitter Voltage VCEO -25 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -1.5 A 1
Collector Power Dissipation PC 300 mW 1
Thermal Resistance From Junction To Ambient RΘJA 417 °C/W 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Collector-base breakdown voltage V(BR)CBO -40 V IC=-100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -25 V IC=-0.1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100µA, IC=0 2
Collector cut-off current ICBO -100 nA VCB=-40V, IE=0 2
Emitter cut-off current IEBO -100 nA VEB=-5V, IC=0 2
DC current gain hFE(1) 200 350 VCE=-1V, IC=-100mA 2
DC current gain hFE(2) 40 VCE=-1V, IC=-800mA 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-800mA, IB=-80mA 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-800mA, IB=-80mA 2
Base-emitter voltage VBE -1 V VCE=-1V, IC=-10mA 2
Transition frequency fT 100 MHz VCE=-10V, IC=-50mA, f=30MHz 2
Collector output capacitance Cob 20 pF VCB=-10V, IE=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: MPS8550S-D-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mps8550s-d-hxy-etched.step / mps8550s-d-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mps8550s-d-hxy.step / mps8550s-d-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 b54d68de723d8a01, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF