component
MPD18N20A
Public Made by Adomby adom
miracle MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MPD18N20A
miracle · MOSFETs · TO-252
MPD18N20A from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated at ±30 V maximum and a gate threshold of 2.0 V to 4.0 V. |
| 2 | D | passive | Drain, rated for VDS of 200 V and 18 A continuous at TC = 25°C (72 A pulsed); also connected to the exposed tab. |
| 3 | S | passive | Source; current return for the 18 A continuous drain current and the body diode (IS 18 A max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 200V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±30V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID =250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.115 | 0.15 | Ω | VGS = 10V, ID = 9A | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 18 | A | VGS = 0V | 2 | ||
| Maximum Pulsed Current | ISM | 72 | A | VGS = 0V | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 9A | 2 | ||
| Drain-Source Voltage | VDS | 200 | V | TJ=+25 ℃ to +150 ℃ | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | Tc = 25°C | 1 | |
| Drain Current-Continuous | ID | 18 | A | TC =25°C | 1 | ||
| Drain Current-Continuous | ID | 11.4 | A | TC =100°C | 1 | ||
| Drain Current-Pulsed | IDM | 72 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 100 | W | TJ =25°C | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | ISD =18A, dIF/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 423 | mJ | L = 10mH, VDD=50V, IAS = 9.2A, RG=25Ω, Starting TJ=25℃ | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.25 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | 1 | |||
| Input Capacitance | Ciss | 1085 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 92 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 | ||
| Turn-On Rise Time | tr | 46 | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 58 | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 | ||
| Turn-Off Fall Time | tf | 41 | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 | ||
| Total Gate Charge | Qg | 25 | nC | VDS = 100V, ID =18A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 7.3 | nC | VDS = 100V, ID =18A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 9.1 | nC | VDS = 100V, ID =18A, VGS = 10V | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 195 | ns | IS=18A, VGS = 0V, dIF/dt=100A/us | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 931 | nC | IS=18A, VGS = 0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
MPD18N20A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mpd18n20a-etched.step/mpd18n20a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mpd18n20a.step/mpd18n20a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (5 pp, sha256
78564872469d45b9, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MPD18N20A
**miracle** · MOSFETs · TO-252
MPD18N20A from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated at ±30 V maximum and a gate threshold of 2.0 V to 4.0 V. |
| 2 | D | passive | Drain, rated for VDS of 200 V and 18 A continuous at TC = 25°C (72 A pulsed); also connected to the exposed tab. |
| 3 | S | passive | Source; current return for the 18 A continuous drain current and the body diode (IS 18 A max). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 200V, VGS = 0V | 1 |
| Forward Gate Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±30V | 1 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID =250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | 0.115 | 0.15 | Ω | VGS = 10V, ID = 9A | 2 |
| Drain-Source Diode Forward Continuous Current | IS | | | 18 | A | VGS = 0V | 2 |
| Maximum Pulsed Current | ISM | | | 72 | A | VGS = 0V | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 9A | 2 |
| Drain-Source Voltage | VDS | | | 200 | V | TJ=+25 ℃ to +150 ℃ | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | Tc = 25°C | 1 |
| Drain Current-Continuous | ID | | | 18 | A | TC =25°C | 1 |
| Drain Current-Continuous | ID | | | 11.4 | A | TC =100°C | 1 |
| Drain Current-Pulsed | IDM | | | 72 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 100 | W | TJ =25°C | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5.5 | V/ns | ISD =18A, dIF/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 423 | mJ | L = 10mH, VDD=50V, IAS = 9.2A, RG=25Ω, Starting TJ=25℃ | 1 |
| Operating and Store Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 1.25 | °C/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62.5 | °C/W | | 1 |
| Input Capacitance | Ciss | | 1085 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 92 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 15 | | pF | VDS = 100V, VGS = 0V, f = 1.0MHz | 2 |
| Turn-On Delay Time | td(on) | | 15 | | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 |
| Turn-On Rise Time | tr | | 46 | | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 |
| Turn-Off Delay Time | td(off) | | 58 | | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 |
| Turn-Off Fall Time | tf | | 41 | | ns | VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω | 2 |
| Total Gate Charge | Qg | | 25 | | nC | VDS = 100V, ID =18A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 7.3 | | nC | VDS = 100V, ID =18A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 9.1 | | nC | VDS = 100V, ID =18A, VGS = 10V | 2 |
| Body Diode Reverse Recovery Time | Trr | | 195 | | ns | IS=18A, VGS = 0V, dIF/dt=100A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 931 | | nC | IS=18A, VGS = 0V, dIF/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `MPD18N20A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mpd18n20a-etched.step` / `mpd18n20a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mpd18n20a.step` / `mpd18n20a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [miracle datasheet](docs/mpd18n20a-datasheet.pdf) (5 pp, sha256 `78564872469d45b9`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mpd18n20a-datasheet.pdf)