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Contents

README

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MPD18N20A

miracle · MOSFETs · TO-252

MPD18N20A from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated at ±30 V maximum and a gate threshold of 2.0 V to 4.0 V.
2 D passive Drain, rated for VDS of 200 V and 18 A continuous at TC = 25°C (72 A pulsed); also connected to the exposed tab.
3 S passive Source; current return for the 18 A continuous drain current and the body diode (IS 18 A max).

Key specifications

Parameter Value
Manufacturer miracle
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 200V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±30V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID =250μA 2
Static Drain-Source On-Resistance RDS(on) 0.115 0.15 Ω VGS = 10V, ID = 9A 2
Drain-Source Diode Forward Continuous Current IS 18 A VGS = 0V 2
Maximum Pulsed Current ISM 72 A VGS = 0V 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 9A 2
Drain-Source Voltage VDS 200 V TJ=+25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -30 30 V Tc = 25°C 1
Drain Current-Continuous ID 18 A TC =25°C 1
Drain Current-Continuous ID 11.4 A TC =100°C 1
Drain Current-Pulsed IDM 72 A Repetitive rating; pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 100 W TJ =25°C 1
Peak Diode Recovery dv/dt dv/dt 5.5 V/ns ISD =18A, dIF/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Single Pulsed Avalanche Energy EAS 423 mJ L = 10mH, VDD=50V, IAS = 9.2A, RG=25Ω, Starting TJ=25℃ 1
Operating and Store Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 1.25 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 1
Input Capacitance Ciss 1085 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 92 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 15 pF VDS = 100V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 15 ns VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω 2
Turn-On Rise Time tr 46 ns VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω 2
Turn-Off Delay Time td(off) 58 ns VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω 2
Turn-Off Fall Time tf 41 ns VDD = 100V, ID =18A, VGS=10V, RGEN=24Ω 2
Total Gate Charge Qg 25 nC VDS = 100V, ID =18A, VGS = 10V 2
Gate-Source Charge Qgs 7.3 nC VDS = 100V, ID =18A, VGS = 10V 2
Gate-Drain Charge Qgd 9.1 nC VDS = 100V, ID =18A, VGS = 10V 2
Body Diode Reverse Recovery Time Trr 195 ns IS=18A, VGS = 0V, dIF/dt=100A/us 2
Body Diode Reverse Recovery Charge Qrr 931 nC IS=18A, VGS = 0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: MPD18N20A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mpd18n20a-etched.step / mpd18n20a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpd18n20a.step / mpd18n20a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (5 pp, sha256 78564872469d45b9, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF