# MOT9N50D

**MOT** · MOSFETs · TO-252

MOT9N50D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate; gate-source voltage is rated ±30 V (VGS). |
| 2 | Drain | passive | MOSFET drain; drain-source voltage is rated 500 V (VDSS) with 9 A continuous drain current at TC=25°C. |
| 3 | Source | passive | MOSFET source; body-diode continuous current is limited to 9 A (IS) with 36 A pulsed (ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 9 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 36 | A |  | 1 |
| Avalanche Current | IAR |  |  | 9 | A |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 360 | mJ | Note 3: L=8mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25°C | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 13.5 | mJ | Note 2: pulse width limited by maximum junction temperature | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 4: ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C | 1 |
| Power Dissipation | PD |  |  | 44 | W | TC=25°C | 1 |
| Derate above 25°C | PD |  |  | 0.35 | W/°C | Derate above 25°C | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 |  |  | V | ID=250µA, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=500V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | µA | VDS=400V, TC=125°C | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 0.7 | 0.73 | Ω | VGS=10V, ID=4.5A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 9 | A |  | 2 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 36 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=9A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `MOT9N50D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot9n50d-etched.step` / `mot9n50d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot9n50d.step` / `mot9n50d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590297897121456128) (6 pp, sha256 `0b1ce9b2069f66a2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot9n50d-datasheet.pdf)