component
MOT9N50D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| mot9n50d-etched.glb | 23d ago |
| mot9n50d-etched.step | 23d ago |
| mot9n50d-hero.glb | 23d ago |
| mot9n50d-hero.overlay.json | 23d ago |
| mot9n50d.glb | 23d ago |
| mot9n50d.kicad_mod | 23d ago |
| mot9n50d.kicad_sym | 23d ago |
| mot9n50d.lbr | 23d ago |
| mot9n50d.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
MOT9N50D
MOT · MOSFETs · TO-252
MOT9N50D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate; gate-source voltage is rated ±30 V (VGS). |
| 2 | Drain | passive | MOSFET drain; drain-source voltage is rated 500 V (VDSS) with 9 A continuous drain current at TC=25°C. |
| 3 | Source | passive | MOSFET source; body-diode continuous current is limited to 9 A (IS) with 36 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 9 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | 1 | |||
| Avalanche Current | IAR | 9 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 360 | mJ | Note 3: L=8mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25°C | 1 | ||
| Repetitive Avalanche Energy | EAR | 13.5 | mJ | Note 2: pulse width limited by maximum junction temperature | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4: ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C | 1 | ||
| Power Dissipation | PD | 44 | W | TC=25°C | 1 | ||
| Derate above 25°C | PD | 0.35 | W/°C | Derate above 25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250µA, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=500V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=400V, TC=125°C | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.7 | 0.73 | Ω | VGS=10V, ID=4.5A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 9 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 36 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=9A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
MOT9N50D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot9n50d-etched.step/mot9n50d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot9n50d.step/mot9n50d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
0b1ce9b2069f66a2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).