# MOT5N65D

**MOT** · MOSFETs · TO-252

MOT5N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; rated 650 V drain-source (VDSS) with 5 A continuous drain current (ID). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; body-diode continuous current is rated 5 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | µA | VDS=650V, VGS=0V | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 2.2 | 2.6 | Ω | VGS=10V, ID=2.5A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 5 | A |  | 2 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 10 | A |  | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 5 | A |  | 1 |
| Drain Current Pulsed (Note 2) | IDM |  |  | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 |
| Avalanche Energy Single Pulsed (Note 3) | EAS |  |  | 112 | mJ | L=10mH, IAS=4.73A, VDD=50V, RG=25Ω, starting TJ=25°C | 1 |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt |  |  | 3.2 | V/ns | ISD≤7.0A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C | 1 |
| Power Dissipation TO-251/252 | PD |  |  | 54 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `MOT5N65D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot5n65d-etched.step` / `mot5n65d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot5n65d.step` / `mot5n65d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590298213384290304) (8 pp, sha256 `8f3e921418a71b06`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot5n65d-datasheet.pdf)