component
MOT5N65D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMOT5N65D
MOT · MOSFETs · TO-252
MOT5N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; rated 650 V drain-source (VDSS) with 5 A continuous drain current (ID). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; body-diode continuous current is rated 5 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.2 | 2.6 | Ω | VGS=10V, ID=2.5A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 5 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 10 | A | 2 | |||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 5 | A | 1 | |||
| Drain Current Pulsed (Note 2) | IDM | 10 | A | Repetitive rating: pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 112 | mJ | L=10mH, IAS=4.73A, VDD=50V, RG=25Ω, starting TJ=25°C | 1 | ||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 3.2 | V/ns | ISD≤7.0A, di/dt≤200A/μs, VDD≤BVDSS, starting TJ=25°C | 1 | ||
| Power Dissipation TO-251/252 | PD | 54 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MOT5N65D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot5n65d-etched.step/mot5n65d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot5n65d.step/mot5n65d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (8 pp, sha256
8f3e921418a71b06, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).