component
MOT5N50MD
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MOT5N50MD
MOT · MOSFETs · TO-252
MOT5N50MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet gives a gate-source voltage limit of ±30 V (VGSS), and the device is specified for VGS = 10 V drive. |
| 2 | Drain | passive | Drain terminal rated for 500 V drain-source voltage (BVDSS) with 5 A continuous drain current (ID) and a 13 A pulsed drain current as printed in the absolute maximum ratings. |
| 3 | Source | passive | Source terminal; the body diode is rated for 5 A maximum continuous forward current (IS) and 20 A maximum pulsed forward current (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 5 | A | TC = 25°C (table header) | 1 | ||
| Drain Current Pulsed | IDM | 13 | A | Pulsed (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 151 | mJ | L=10mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤5.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C (Note 4) | 1 | ||
| Power Dissipation | PD | 50 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=500V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=400V, TC=125°C | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 1.6 | 2.2 | Ω | VGS=10V, ID=2.5A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 5 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 20 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=5A, VGS=0V | 2 | ||
| Input Capacitance | CISS | 625 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | COSS | 80 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 15 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Total Gate Charge | QG | 18 | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 | ||
| Gate to Source Charge | QGS | 2.2 | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 | ||
| Gate to Drain Charge | QGD | 9.7 | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 | ||
| Turn-ON Delay Time | tD(ON) | 12 | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 | ||
| Rise Time | tR | 46 | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 | ||
| Turn-OFF Delay Time | tD(OFF) | 50 | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 | ||
| Fall-Time | tF | 48 | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 | ||
| Reverse Recovery Charge | QRR | 0.25 | uC | IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) | 2 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.5 | V/°C | Reference to 25°C, ID=250µA | 2 |
CAD (KiCad official)
- Symbol:
MOT5N50MD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot5n50md-etched.step/mot5n50md-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot5n50md.step/mot5n50md.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (7 pp, sha256
bab33b388896aa58, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT5N50MD
**MOT** · MOSFETs · TO-252
MOT5N50MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet gives a gate-source voltage limit of ±30 V (VGSS), and the device is specified for VGS = 10 V drive. |
| 2 | Drain | passive | Drain terminal rated for 500 V drain-source voltage (BVDSS) with 5 A continuous drain current (ID) and a 13 A pulsed drain current as printed in the absolute maximum ratings. |
| 3 | Source | passive | Source terminal; the body diode is rated for 5 A maximum continuous forward current (IS) and 20 A maximum pulsed forward current (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 500 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Drain Current Continuous | ID | | | 5 | A | TC = 25°C (table header) | 1 |
| Drain Current Pulsed | IDM | | | 13 | A | Pulsed (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 151 | mJ | L=10mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD≤5.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C (Note 4) | 1 |
| Power Dissipation | PD | | | 50 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | ID=250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250µA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | µA | VDS=500V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | µA | VDS=400V, TC=125°C | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 1.6 | 2.2 | Ω | VGS=10V, ID=2.5A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 5 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 20 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | IS=5A, VGS=0V | 2 |
| Input Capacitance | CISS | | 625 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Output Capacitance | COSS | | 80 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 15 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Total Gate Charge | QG | | 18 | | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 |
| Gate to Source Charge | QGS | | 2.2 | | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 |
| Gate to Drain Charge | QGD | | 9.7 | | nC | VGS=10V, VDS=400V, ID=5A (Note 1, 2) | 2 |
| Turn-ON Delay Time | tD(ON) | | 12 | | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 |
| Rise Time | tR | | 46 | | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 |
| Turn-OFF Delay Time | tD(OFF) | | 50 | | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 |
| Fall-Time | tF | | 48 | | ns | VDD=250V, ID=5A, RG=25Ω (Note 1, 2) | 2 |
| Reverse Recovery Charge | QRR | | 0.25 | | uC | IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) | 2 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.5 | | V/°C | Reference to 25°C, ID=250µA | 2 |
## CAD (KiCad official)
- Symbol: `MOT5N50MD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot5n50md-etched.step` / `mot5n50md-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot5n50md.step` / `mot5n50md.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921395700244480) (7 pp, sha256 `bab33b388896aa58`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot5n50md-datasheet.pdf)