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MOT5N50MD

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MOT5N50MD

MOT · MOSFETs · TO-252

MOT5N50MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal; the datasheet gives a gate-source voltage limit of ±30 V (VGSS), and the device is specified for VGS = 10 V drive.
2 Drain passive Drain terminal rated for 500 V drain-source voltage (BVDSS) with 5 A continuous drain current (ID) and a 13 A pulsed drain current as printed in the absolute maximum ratings.
3 Source passive Source terminal; the body diode is rated for 5 A maximum continuous forward current (IS) and 20 A maximum pulsed forward current (ISM).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 5 A TC = 25°C (table header) 1
Drain Current Pulsed IDM 13 A Pulsed (Note 2) 1
Avalanche Energy Single Pulsed EAS 151 mJ L=10mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤5.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C (Note 4) 1
Power Dissipation PD 50 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 500 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Drain-Source Leakage Current IDSS 10 µA VDS=400V, TC=125°C 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 1.6 2.2 Ω VGS=10V, ID=2.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS=5A, VGS=0V 2
Input Capacitance CISS 625 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance COSS 80 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance CRSS 15 pF VGS=0V, VDS=25V, f=1.0MHz 2
Total Gate Charge QG 18 nC VGS=10V, VDS=400V, ID=5A (Note 1, 2) 2
Gate to Source Charge QGS 2.2 nC VGS=10V, VDS=400V, ID=5A (Note 1, 2) 2
Gate to Drain Charge QGD 9.7 nC VGS=10V, VDS=400V, ID=5A (Note 1, 2) 2
Turn-ON Delay Time tD(ON) 12 ns VDD=250V, ID=5A, RG=25Ω (Note 1, 2) 2
Rise Time tR 46 ns VDD=250V, ID=5A, RG=25Ω (Note 1, 2) 2
Turn-OFF Delay Time tD(OFF) 50 ns VDD=250V, ID=5A, RG=25Ω (Note 1, 2) 2
Fall-Time tF 48 ns VDD=250V, ID=5A, RG=25Ω (Note 1, 2) 2
Reverse Recovery Charge QRR 0.25 uC IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.5 V/°C Reference to 25°C, ID=250µA 2

CAD (KiCad official)

  • Symbol: MOT5N50MD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot5n50md-etched.step / mot5n50md-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot5n50md.step / mot5n50md.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 bab33b388896aa58, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF