component
MOT50N03D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MOT50N03D
MOT · MOSFETs · TO-252
MOT50N03D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated to ±20 V per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated to 30 V and continuous drain current to 50 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | 1 | |||
| Pulsed Drain Current | IDM | 180 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 45 | mJ | L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3) | 1 | ||
| Power Dissipation | PD | 50 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250 µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1.5 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate-Threshold Voltage | VGS(TH) | 1 | 1.7 | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 8 | 10 | mΩ | VGS = 10 V, ID = 15 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 10 | 13 | mΩ | VGS = 4.5 V, ID = 10 A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 0.85 | 1.1 | V | IS = 30 A, VGS = 0V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 50 | A | 2 | |||
| Output Capacitance | COSS | 300 | pF | VDS=12V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 125 | pF | VDS=12V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 24 | ns | IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | QRR | 14 | nC | IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs | 2 | ||
| Turn-ON Rise Time | tR | 9.6 | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-OFF Delay Time | tD(OFF) | 11.2 | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-OFF Fall-Time | tF | 6.8 | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-ON Delay Time | tD(ON) | 5 | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-ON Rise Time | tR | 84 | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-OFF Delay Time | tD(OFF) | 15 | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Turn-OFF Fall-Time | tF | 4 | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 | ||
| Gate-to-Source Charge | QGS | 1.9 | nC | VDS = 15V, VGS = 4.5V, ID = 30 A | 2 | ||
| Gate-to-Drain Charge | QGD | 3.7 | nC | VDS = 15V, VGS = 4.5V, ID = 30 A | 2 | ||
| Total Gate Charge | QG | 15 | nC | VDS = 15V, VGS = 11.5V, ID = 30 A | 2 | ||
| Gate-to-Drain Charge | QGD | 3.9 | nC | VDS = 15V, VGS = 11.5V, ID = 30 A | 2 |
CAD (KiCad official)
- Symbol:
MOT50N03D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot50n03d-etched.step/mot50n03d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot50n03d.step/mot50n03d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
bca74d0fc01e96f4, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT50N03D
**MOT** · MOSFETs · TO-252
MOT50N03D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated to ±20 V per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated to 30 V and continuous drain current to 50 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 50 | A | | 1 |
| Pulsed Drain Current | IDM | | | 180 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 45 | mJ | L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3) | 1 |
| Power Dissipation | PD | | | 50 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250 µA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1.5 | µA | VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate-Threshold Voltage | VGS(TH) | 1 | 1.7 | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 8 | 10 | mΩ | VGS = 10 V, ID = 15 A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 10 | 13 | mΩ | VGS = 4.5 V, ID = 10 A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 0.85 | 1.1 | V | IS = 30 A, VGS = 0V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 50 | A | | 2 |
| Output Capacitance | COSS | | 300 | | pF | VDS=12V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 125 | | pF | VDS=12V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr | | 24 | | ns | IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs | 2 |
| Reverse Recovery Charge | QRR | | 14 | | nC | IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs | 2 |
| Turn-ON Rise Time | tR | | 9.6 | | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-OFF Delay Time | tD(OFF) | | 11.2 | | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-OFF Fall-Time | tF | | 6.8 | | ns | VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-ON Delay Time | tD(ON) | | 5 | | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-ON Rise Time | tR | | 84 | | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-OFF Delay Time | tD(OFF) | | 15 | | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Turn-OFF Fall-Time | tF | | 4 | | ns | VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω | 2 |
| Gate-to-Source Charge | QGS | | 1.9 | | nC | VDS = 15V, VGS = 4.5V, ID = 30 A | 2 |
| Gate-to-Drain Charge | QGD | | 3.7 | | nC | VDS = 15V, VGS = 4.5V, ID = 30 A | 2 |
| Total Gate Charge | QG | | 15 | | nC | VDS = 15V, VGS = 11.5V, ID = 30 A | 2 |
| Gate-to-Drain Charge | QGD | | 3.9 | | nC | VDS = 15V, VGS = 11.5V, ID = 30 A | 2 |
## CAD (KiCad official)
- Symbol: `MOT50N03D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot50n03d-etched.step` / `mot50n03d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot50n03d.step` / `mot50n03d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590298214592520192) (6 pp, sha256 `bca74d0fc01e96f4`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot50n03d-datasheet.pdf)