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MOT50N03D

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MOT50N03D

MOT · MOSFETs · TO-252

MOT50N03D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated to ±20 V per the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated to 30 V and continuous drain current to 50 A.
3 Source passive Source terminal of the N-channel MOSFET, the reference for the gate-source voltage.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 50 A 1
Pulsed Drain Current IDM 180 A Note 2: repetitive rating, pulse width limited by max junction temperature 1
Single Pulsed Avalanche Energy EAS 45 mJ L = 0.1mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3) 1
Power Dissipation PD 50 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1.5 µA VDS = 20V, VGS = 0V 2
Gate-Source Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate-Threshold Voltage VGS(TH) 1 1.7 2 V VDS = VGS, ID = 250 µA 2
Drain-Source On-State Resistance RDS(ON) 8 10 mΩ VGS = 10 V, ID = 15 A 2
Drain-Source On-State Resistance RDS(ON) 10 13 mΩ VGS = 4.5 V, ID = 10 A 2
Drain-Source Diode Forward Voltage VSD 0.85 1.1 V IS = 30 A, VGS = 0V 2
Maximum Continuous Drain-Source Diode Forward Current IS 50 A 2
Output Capacitance COSS 300 pF VDS=12V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance CRSS 125 pF VDS=12V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 24 ns IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs 2
Reverse Recovery Charge QRR 14 nC IS = 30 A, VGS = 0 V, dI/dt = 100 A/μs 2
Turn-ON Rise Time tR 9.6 ns VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-OFF Delay Time tD(OFF) 11.2 ns VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-OFF Fall-Time tF 6.8 ns VGS = 4.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-ON Delay Time tD(ON) 5 ns VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-ON Rise Time tR 84 ns VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-OFF Delay Time tD(OFF) 15 ns VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Turn-OFF Fall-Time tF 4 ns VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0Ω 2
Gate-to-Source Charge QGS 1.9 nC VDS = 15V, VGS = 4.5V, ID = 30 A 2
Gate-to-Drain Charge QGD 3.7 nC VDS = 15V, VGS = 4.5V, ID = 30 A 2
Total Gate Charge QG 15 nC VDS = 15V, VGS = 11.5V, ID = 30 A 2
Gate-to-Drain Charge QGD 3.9 nC VDS = 15V, VGS = 11.5V, ID = 30 A 2

CAD (KiCad official)

  • Symbol: MOT50N03D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot50n03d-etched.step / mot50n03d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot50n03d.step / mot50n03d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 bca74d0fc01e96f4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF