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Generated by kicad-footprint-generator · KiCad file format 20260206

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mot4n65d-etched.step	mot4n65d: factory component page (tier=lcsc) · Ray	7d ago
mot4n65d-hero.glb	mot4n65d: hero GLB from the etched model (keeps the MPN mark) · Ray	7d ago
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MOT4N65D

MOT · MOSFETs · TO-252

MOT4N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal; the absolute maximum gate-source voltage is ±30 V.
2	Drain	passive	Drain terminal; the part is rated 650 V VDSS with 4.0 A continuous drain current at TC = 25°C.
3	Source	passive	Source terminal; the datasheet gives maximum continuous body-diode forward current IS of 4 A and pulsed ISM of 16 A.

Key specifications

Parameter	Value
Manufacturer	MOT
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			650	V	TC = 25°C, unless otherwise specified (table header)	1
Gate-Source Voltage	VGSS	-30		30	V	TC = 25°C, unless otherwise specified (table header)	1
Drain Current Continuous	ID			4	A	TC = 25°C, unless otherwise specified (table header)	1
Drain Current Pulsed	IDM			16	A	Pulse width limited by max junction temperature (Note 2)	1
Avalanche Energy Single Pulsed	EAS			260	mJ	L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3)	1
Avalanche Energy Repetitive	EAR			10.6	mJ	Pulse width limited by max junction temperature (Note 2)	1
Peak Diode Recovery dv/dt	dv/dt			4.5	V/ns	ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4)	1
Power Dissipation	PD			50	W	TC = 25°C, unless otherwise specified (table header)	1
Junction Temperature	TJ			150	°C		1
Operating Temperature	TOPR	-55		150	°C		1
Storage Temperature	TSTG	-55		150	°C		1
Drain-Source Breakdown Voltage	BVDSS	650			V	VGS = 0V, ID = 250μA	2
Drain-Source Leakage Current	IDSS			1	μA	VDS = 650V, VGS = 0V	2
Gate-Source Leakage Current Forward	IGSS			100	nA	VGS = 30V, VDS = 0V	2
Gate-Source Leakage Current Reverse	IGSS			-100	nA	VGS = -30V, VDS = 0V	2
Gate Threshold Voltage	VGS(TH)	2		4	V	VDS = VGS, ID = 250μA	2
Static Drain-Source On-State Resistance	RDS(ON)		2.41	2.8	Ω	VGS = 10V, ID = 2.0A	2
Maximum Continuous Drain-Source Diode Forward Current	IS			4	A		2
Maximum Pulsed Drain-Source Diode Forward Current	ISM			16	A		2

CAD (KiCad official)

Symbol: MOT4N65D
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: mot4n65d-etched.step / mot4n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot4n65d.step / mot4n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: MOT datasheet (6 pp, sha256 6df340283cfe60bf, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF