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MOT4N65D

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

MOT4N65D

MOT · MOSFETs · TO-252

MOT4N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the absolute maximum gate-source voltage is ±30 V.
2 Drain passive Drain terminal; the part is rated 650 V VDSS with 4.0 A continuous drain current at TC = 25°C.
3 Source passive Source terminal; the datasheet gives maximum continuous body-diode forward current IS of 4 A and pulsed ISM of 16 A.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V TC = 25°C, unless otherwise specified (table header) 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C, unless otherwise specified (table header) 1
Drain Current Continuous ID 4 A TC = 25°C, unless otherwise specified (table header) 1
Drain Current Pulsed IDM 16 A Pulse width limited by max junction temperature (Note 2) 1
Avalanche Energy Single Pulsed EAS 260 mJ L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C (Note 3) 1
Avalanche Energy Repetitive EAR 10.6 mJ Pulse width limited by max junction temperature (Note 2) 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) 1
Power Dissipation PD 50 W TC = 25°C, unless otherwise specified (table header) 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 2.41 2.8 Ω VGS = 10V, ID = 2.0A 2
Maximum Continuous Drain-Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A 2

CAD (KiCad official)

  • Symbol: MOT4N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot4n65d-etched.step / mot4n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot4n65d.step / mot4n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 6df340283cfe60bf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF