# MOT4N65C

**MOT** · MOSFETs · TO-251

MOT4N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates gate-source voltage at ±30 V and gate threshold VGS(TH) at 2.0 to 4.0 V. |
| 2 | Drain | passive | Drain terminal; the datasheet rates drain-source voltage VDSS at 650 V and continuous drain current ID at 4 A. |
| 3 | Source | passive | Source terminal; the datasheet's source-referenced limits include a gate-source voltage of ±30 V and a continuous diode forward current IS of 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 4 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A | Pulsed (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 260 | mJ | Note 3 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 4 | 1 |
| Power Dissipation | PD |  |  | 50 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Operating Temperature | TOPR | -55 |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | μA | VDS = 650V, VGS = 0V | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS = 30V, VDS = 0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS = -30V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 2.41 | 2.8 | Ω | VGS = 10V, ID = 2.0A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 4 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 16 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `MOT4N65C`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `mot4n65c-etched.step` / `mot4n65c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot4n65c.step` / `mot4n65c.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](docs/mot4n65c-datasheet.pdf) (6 pp, sha256 `6df340283cfe60bf`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot4n65c-datasheet.pdf)