component
MOT4N65C
Public Made by Adomby adom
MOT MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| mot4n65c-etched.glb | 12d ago |
| mot4n65c-etched.step | 12d ago |
| mot4n65c-hero.glb | 12d ago |
| mot4n65c-hero.overlay.json | 12d ago |
| mot4n65c.glb | 12d ago |
| mot4n65c.kicad_mod | 12d ago |
| mot4n65c.kicad_sym | 12d ago |
| mot4n65c.lbr | 12d ago |
| mot4n65c.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
MOT4N65C
MOT · MOSFETs · TO-251
MOT4N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates gate-source voltage at ±30 V and gate threshold VGS(TH) at 2.0 to 4.0 V. |
| 2 | Drain | passive | Drain terminal; the datasheet rates drain-source voltage VDSS at 650 V and continuous drain current ID at 4 A. |
| 3 | Source | passive | Source terminal; the datasheet's source-referenced limits include a gate-source voltage of ±30 V and a continuous diode forward current IS of 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 4 | A | 1 | |||
| Pulsed Drain Current | IDM | 16 | A | Pulsed (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 260 | mJ | Note 3 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4 | 1 | ||
| Power Dissipation | PD | 50 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS = 650V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.41 | 2.8 | Ω | VGS = 10V, ID = 2.0A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | 2 |
CAD (KiCad official)
- Symbol:
MOT4N65C - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
mot4n65c-etched.step/mot4n65c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot4n65c.step/mot4n65c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
6df340283cfe60bf, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).