# MMUN5235DW

**CBI** · Digital Transistors · SOT-363

MMUN5235DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (NPN BRT with R1 = 2.2 kΩ and R2 = 47 kΩ bias network, VCEO 50 Vdc, IC 100 mAdc). |
| 2 | B2 | input | Base of Q2, entering through the series base resistor R1 (2.2 kΩ), with R2 (47 kΩ) base-emitter resistor. |
| 3 | C1 | passive | Collector of Q1 (VCBO 50 Vdc, VCEO 50 Vdc, IC max 100 mAdc). |
| 4 | E1 | passive | Emitter of Q1 (NPN BRT with R1 = 2.2 kΩ and R2 = 47 kΩ bias network). |
| 5 | B1 | input | Base of Q1, entering through the series base resistor R1 (2.2 kΩ), with R2 (47 kΩ) base-emitter resistor. |
| 6 | C2 | passive | Collector of Q2 (VCBO 50 Vdc, VCEO 50 Vdc, IC max 100 mAdc). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain | hFE | 80 |  |  |  | VCE = 10 V, IC = 5 mA | 3 |
| Collector Base Cutoff Current | ICBO |  |  | 100 | nA | VCB = 50 V | 3 |
| Collector Emitter Cutoff Current | ICEO |  |  | 500 | nA | VCE = 50 V | 3 |
| Emitter Base Cutoff Current | IEBO |  |  | 0.2 | mA | VEB = 6 V | 3 |
| Collector Base Breakdown Voltage | V(BR)CBO | 50 |  |  | V | IC = 10 µA | 3 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 |  |  | V | IC = 2 mA | 3 |
| Collector Emitter Saturation Voltage | VCEsat |  |  | 0.25 | V | IC = 10 mA, IB = 1 mA | 3 |
| Output Voltage (on) | VOL |  |  | 0.2 | V | VCC = 5 V, VB = 2.5 V, RL = 1 KΩ | 4 |
| Output Voltage (off) | VOH | 4.9 |  |  | V | VCC = 5 V, VB = 0.5 V, RL = 1 KΩ | 4 |
| Input Resistor R1 | R1 | 1.54 |  | 2.86 | KΩ |  | 4 |
| Resistor Ratio R1/R2 | R1/R2 | 0.038 |  | 0.056 |  |  | 4 |
| Collector-Base Voltage | V CBO |  |  | 50 | Vdc |  | 1 |
| Collector-Emitter Voltage | V CEO |  |  | 50 | Vdc |  | 1 |
| Collector Current | I C |  |  | 100 | mAdc |  | 1 |
| Junction and Storage Temperature | T J , T stg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation (one junction heated) | P D |  |  | 187 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 |
| Total Device Dissipation (one junction heated) | P D |  |  | 256 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Derate above 25°C (one junction heated) |  |  |  | 1.5 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 |
| Derate above 25°C (one junction heated) |  |  |  | 2 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Thermal Resistance Junction-to-Ambient (one junction heated) | R θJA |  |  | 670 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 |
| Thermal Resistance Junction-to-Ambient (one junction heated) | R θJA |  |  | 490 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Total Device Dissipation (both junctions heated) | P D |  |  | 250 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 |
| Total Device Dissipation (both junctions heated) | P D |  |  | 385 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Derate above 25°C (both junctions heated) |  |  |  | 2 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 |
| Derate above 25°C (both junctions heated) |  |  |  | 3 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Thermal Resistance Junction-to-Ambient (both junctions heated) | R θJA |  |  | 493 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 |
| Thermal Resistance Junction-to-Ambient (both junctions heated) | R θJA |  |  | 325 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
| Thermal Resistance Junction-to-Lead | R θJL |  |  | 188 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 |
| Thermal Resistance Junction-to-Lead | R θJL |  |  | 208 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |

## CAD (KiCad official)

- Symbol: `MMUN5235DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmun5235dw-etched.step` / `mmun5235dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmun5235dw.step` / `mmun5235dw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [CBI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920800314732544) (6 pp, sha256 `51373d1a4acf0868`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmun5235dw-datasheet.pdf)