component
MMUN5235DW
Public Made by Adomby adom
CBI Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMUN5235DW
CBI · Digital Transistors · SOT-363
MMUN5235DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (NPN BRT with R1 = 2.2 kΩ and R2 = 47 kΩ bias network, VCEO 50 Vdc, IC 100 mAdc). |
| 2 | B2 | input | Base of Q2, entering through the series base resistor R1 (2.2 kΩ), with R2 (47 kΩ) base-emitter resistor. |
| 3 | C1 | passive | Collector of Q1 (VCBO 50 Vdc, VCEO 50 Vdc, IC max 100 mAdc). |
| 4 | E1 | passive | Emitter of Q1 (NPN BRT with R1 = 2.2 kΩ and R2 = 47 kΩ bias network). |
| 5 | B1 | input | Base of Q1, entering through the series base resistor R1 (2.2 kΩ), with R2 (47 kΩ) base-emitter resistor. |
| 6 | C2 | passive | Collector of Q2 (VCBO 50 Vdc, VCEO 50 Vdc, IC max 100 mAdc). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain | hFE | 80 | VCE = 10 V, IC = 5 mA | 3 | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 50 V | 3 | ||
| Collector Emitter Cutoff Current | ICEO | 500 | nA | VCE = 50 V | 3 | ||
| Emitter Base Cutoff Current | IEBO | 0.2 | mA | VEB = 6 V | 3 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 10 µA | 3 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 2 mA | 3 | ||
| Collector Emitter Saturation Voltage | VCEsat | 0.25 | V | IC = 10 mA, IB = 1 mA | 3 | ||
| Output Voltage (on) | VOL | 0.2 | V | VCC = 5 V, VB = 2.5 V, RL = 1 KΩ | 4 | ||
| Output Voltage (off) | VOH | 4.9 | V | VCC = 5 V, VB = 0.5 V, RL = 1 KΩ | 4 | ||
| Input Resistor R1 | R1 | 1.54 | 2.86 | KΩ | 4 | ||
| Resistor Ratio R1/R2 | R1/R2 | 0.038 | 0.056 | 4 | |||
| Collector-Base Voltage | V CBO | 50 | Vdc | 1 | |||
| Collector-Emitter Voltage | V CEO | 50 | Vdc | 1 | |||
| Collector Current | I C | 100 | mAdc | 1 | |||
| Junction and Storage Temperature | T J , T stg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (one junction heated) | P D | 187 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Total Device Dissipation (one junction heated) | P D | 256 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Derate above 25°C (one junction heated) | 1.5 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 | |||
| Derate above 25°C (one junction heated) | 2 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | |||
| Thermal Resistance Junction-to-Ambient (one junction heated) | R θJA | 670 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Ambient (one junction heated) | R θJA | 490 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Total Device Dissipation (both junctions heated) | P D | 250 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Total Device Dissipation (both junctions heated) | P D | 385 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Derate above 25°C (both junctions heated) | 2 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 | |||
| Derate above 25°C (both junctions heated) | 3 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | |||
| Thermal Resistance Junction-to-Ambient (both junctions heated) | R θJA | 493 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Ambient (both junctions heated) | R θJA | 325 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Thermal Resistance Junction-to-Lead | R θJL | 188 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Lead | R θJL | 208 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
MMUN5235DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmun5235dw-etched.step/mmun5235dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmun5235dw.step/mmun5235dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (6 pp, sha256
51373d1a4acf0868, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).