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MMUN5212DW

Public Made by Adom

by adom

CBI Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMUN5212DW

CBI · Digital Transistors · SOT-363

MMUN5212DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of Q2 (ground side), with the Q2 base-emitter resistor R2 (22 kΩ nominal for MMUN5212DW) connected to it.
2 B2 input Base (input) of Q2 through series resistor R1 (22 kΩ nominal for MMUN5212DW, 15.4 to 28.6 kΩ).
3 C1 passive Collector (output) of Q1, rated for VCEO 50 Vdc and IC 100 mAdc maximum.
4 E1 passive Emitter of Q1 (ground side), with the Q1 base-emitter resistor R2 (22 kΩ nominal) connected to it.
5 B1 input Base (input) of Q1 through series resistor R1 (22 kΩ nominal for MMUN5212DW, 15.4 to 28.6 kΩ).
6 C2 passive Collector (output) of Q2, rated for VCEO 50 Vdc and IC 100 mAdc maximum.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain hFE (MMUN5212DW) hFE 60 at VCE = 10 V, IC = 5 mA 3
Collector Base Cutoff Current ICBO 100 nA at VCB = 50 V 3
Collector Emitter Cutoff Current ICEO 500 nA at VCE = 50 V 3
Emitter Base Cutoff Current (MMUN5212DW) IEBO 0.2 mA at VEB = 6 V 3
Collector Base Breakdown Voltage V(BR)CBO 50 V at IC = 10 µA 3
Collector Emitter Breakdown Voltage V(BR)CEO 50 V at IC = 2 mA 3
Collector Emitter Saturation Voltage (MMUN5212DW, row without listed variants) VCEsat 0.25 V at IC = 10 mA, IB = 0.3 mA 3
Output Voltage (on) (MMUN5212DW) VOL 0.2 V at VCC = 5 V, VB = 2.5 V, RL = 1 KΩ 4
Output Voltage (off) (MMUN5212DW, row without listed variants) VOH 4.9 V at VCC = 5 V, VB = 0.5 V, RL = 1 KΩ 4
Input Resistor R1 (MMUN5212DW) R1 15.4 28.6 KΩ 4
Resistor Ratio R1/R2 (MMUN5211DW/MMUN5212DW/MMUN5213DW group) R1/R2 0.8 1.2 4
Collector-Base Voltage VCBO 50 Vdc Common for Q1 and Q2 1
Collector-Emitter Voltage VCEO 50 Vdc Common for Q1 and Q2 1
Collector Current IC 100 mAdc Common for Q1 and Q2 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (one junction heated) PD 187 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1) 1
Total Device Dissipation (one junction heated) PD 256 mW TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Derate above 25°C (one junction heated) 1.5 mW/°C FR-4 @ Minimum Pad (Note 1) 1
Derate above 25°C (one junction heated) 2 mW/°C FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance Junction-to-Ambient (one junction heated) RθJA 670 °C/W FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance Junction-to-Ambient (one junction heated) RθJA 490 °C/W FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Total Device Dissipation (both junctions heated) PD 250 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1) 1
Total Device Dissipation (both junctions heated) PD 385 mW TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Derate above 25°C (both junctions heated) 2 mW/°C FR-4 @ Minimum Pad (Note 1) 1
Derate above 25°C (both junctions heated) 3 mW/°C FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance Junction-to-Ambient (both junctions heated) RθJA 493 °C/W FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance Junction-to-Ambient (both junctions heated) RθJA 325 °C/W FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance Junction-to-Lead RθJL 188 °C/W FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance Junction-to-Lead RθJL 208 °C/W FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Input Resistor R1 nominal (MMUN5212DW) R1 22 K 2
Input/Base-Emitter Resistor R2 nominal (MMUN5212DW) R2 22 K 2

CAD (KiCad official)

  • Symbol: MMUN5212DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmun5212dw-etched.step / mmun5212dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmun5212dw.step / mmun5212dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (5 pp, sha256 0c33727b07947818, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF