component
MMUN5212DW
Public Made by Adomby adom
CBI Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMUN5212DW
CBI · Digital Transistors · SOT-363
MMUN5212DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (ground side), with the Q2 base-emitter resistor R2 (22 kΩ nominal for MMUN5212DW) connected to it. |
| 2 | B2 | input | Base (input) of Q2 through series resistor R1 (22 kΩ nominal for MMUN5212DW, 15.4 to 28.6 kΩ). |
| 3 | C1 | passive | Collector (output) of Q1, rated for VCEO 50 Vdc and IC 100 mAdc maximum. |
| 4 | E1 | passive | Emitter of Q1 (ground side), with the Q1 base-emitter resistor R2 (22 kΩ nominal) connected to it. |
| 5 | B1 | input | Base (input) of Q1 through series resistor R1 (22 kΩ nominal for MMUN5212DW, 15.4 to 28.6 kΩ). |
| 6 | C2 | passive | Collector (output) of Q2, rated for VCEO 50 Vdc and IC 100 mAdc maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain hFE (MMUN5212DW) | hFE | 60 | at VCE = 10 V, IC = 5 mA | 3 | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | at VCB = 50 V | 3 | ||
| Collector Emitter Cutoff Current | ICEO | 500 | nA | at VCE = 50 V | 3 | ||
| Emitter Base Cutoff Current (MMUN5212DW) | IEBO | 0.2 | mA | at VEB = 6 V | 3 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 50 | V | at IC = 10 µA | 3 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | at IC = 2 mA | 3 | ||
| Collector Emitter Saturation Voltage (MMUN5212DW, row without listed variants) | VCEsat | 0.25 | V | at IC = 10 mA, IB = 0.3 mA | 3 | ||
| Output Voltage (on) (MMUN5212DW) | VOL | 0.2 | V | at VCC = 5 V, VB = 2.5 V, RL = 1 KΩ | 4 | ||
| Output Voltage (off) (MMUN5212DW, row without listed variants) | VOH | 4.9 | V | at VCC = 5 V, VB = 0.5 V, RL = 1 KΩ | 4 | ||
| Input Resistor R1 (MMUN5212DW) | R1 | 15.4 | 28.6 | KΩ | 4 | ||
| Resistor Ratio R1/R2 (MMUN5211DW/MMUN5212DW/MMUN5213DW group) | R1/R2 | 0.8 | 1.2 | 4 | |||
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 | 1 | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 | 1 | ||
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (one junction heated) | PD | 187 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Total Device Dissipation (one junction heated) | PD | 256 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Derate above 25°C (one junction heated) | 1.5 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 | |||
| Derate above 25°C (one junction heated) | 2 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | |||
| Thermal Resistance Junction-to-Ambient (one junction heated) | RθJA | 670 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Ambient (one junction heated) | RθJA | 490 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Total Device Dissipation (both junctions heated) | PD | 250 | mW | TA = 25°C, FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Total Device Dissipation (both junctions heated) | PD | 385 | mW | TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Derate above 25°C (both junctions heated) | 2 | mW/°C | FR-4 @ Minimum Pad (Note 1) | 1 | |||
| Derate above 25°C (both junctions heated) | 3 | mW/°C | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | |||
| Thermal Resistance Junction-to-Ambient (both junctions heated) | RθJA | 493 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Ambient (both junctions heated) | RθJA | 325 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Thermal Resistance Junction-to-Lead | RθJL | 188 | °C/W | FR-4 @ Minimum Pad (Note 1) | 1 | ||
| Thermal Resistance Junction-to-Lead | RθJL | 208 | °C/W | FR-4 @ 1.0 x 1.0 inch Pad (Note 2) | 1 | ||
| Input Resistor R1 nominal (MMUN5212DW) | R1 | 22 | K | 2 | |||
| Input/Base-Emitter Resistor R2 nominal (MMUN5212DW) | R2 | 22 | K | 2 |
CAD (KiCad official)
- Symbol:
MMUN5212DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmun5212dw-etched.step/mmun5212dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmun5212dw.step/mmun5212dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (5 pp, sha256
0c33727b07947818, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).