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Ray mmss8050-h-tp: specified limits as data (metadata.characteristics, 16 rows from the datasheet) 00019b7 23d ago

MMSS8050-H-TP

MCC Micro Commercial Components · Bipolar (BJT) · SOT-23

MMSS8050-H-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet gives emitter-base breakdown V(BR)EBO of 5.0V min and base-emitter saturation voltage VBE(sat) of 1.2V max at IC=800mA, IB=80mA.
2 E passive Emitter of the NPN transistor; the datasheet gives collector current of 1.5A and a VEB of 1.6V max at IE=1.5A.
3 C passive Collector of the NPN transistor; the datasheet gives collector-base voltage of 40V, V(BR)CEO of 25V min and collector current of 1.5A.

Key specifications

Parameter Value
Manufacturer MCC Micro Commercial Components
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO 40 Vdc IC=100μAdc, IE=0 1
Collector-Emitter Breakdown Voltage V(BR)CEO 25 Vdc IC=0.1mAdc, IB=0 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE=100μAdc, IC=0 1
Collector Cutoff Current ICBO 0.1 μAdc VCB=40Vdc, IE=0 1
Emitter Cutoff Current IEBO 0.1 μAdc VEB=5.0Vdc, IC=0 1
DC Current Gain hFE(1) hFE(1) 120 350 --- IC=100mAdc, VCE=1.0Vdc 1
DC Current Gain hFE(1), Rank H (200-350) hFE(1) 200 350 --- 1
DC Current Gain hFE(2) hFE(2) 40 --- IC=800mAdc, VCE=1.0Vdc 1
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc IC=800mAdc, IB=80mAdc 1
Base-Emitter Saturation Voltage VBE(sat) 1.2 Vdc IC=800mAdc, IB=80mAdc 1
Base-Emitter Voltage VEB 1.6 Vdc IE=1.5Adc 1
Transistor Frequency fT 100 MHz IC=50mAdc, VCE=10Vdc, f=30MHz 1
Collector Current IC 1.5 A 1
Collector-Base Voltage VCB 40 V 1
Power Dissipation PD 0.3 Watts Tamb=25°C 1
Operating and Storage Junction Temperature Range TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMSS8050-H-TP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmss8050-h-tp-etched.step / mmss8050-h-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmss8050-h-tp.step / mmss8050-h-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC Micro Commercial Components datasheet (3 pp, sha256 6c551e2767350085, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF