component
MMSS8050-H-TP
Public Made by Adomby adom
MCC Micro Commercial Components Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
mmss8050-h-tp: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ MMSS8050-H-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | | | Vdc | IC=100μAdc, IE=0 | 1 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | | | Vdc | IC=0.1mAdc, IB=0 | 1 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | | | Vdc | IE=100μAdc, IC=0 | 1 |+| Collector Cutoff Current | ICBO | | | 0.1 | μAdc | VCB=40Vdc, IE=0 | 1 |+| Emitter Cutoff Current | IEBO | | | 0.1 | μAdc | VEB=5.0Vdc, IC=0 | 1 |+| DC Current Gain hFE(1) | hFE(1) | 120 | | 350 | --- | IC=100mAdc, VCE=1.0Vdc | 1 |+| DC Current Gain hFE(1), Rank H (200-350) | hFE(1) | 200 | | 350 | --- | | 1 |+| DC Current Gain hFE(2) | hFE(2) | 40 | | | --- | IC=800mAdc, VCE=1.0Vdc | 1 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.5 | Vdc | IC=800mAdc, IB=80mAdc | 1 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 1.2 | Vdc | IC=800mAdc, IB=80mAdc | 1 |+| Base-Emitter Voltage | VEB | | | 1.6 | Vdc | IE=1.5Adc | 1 |+| Transistor Frequency | fT | 100 | | | MHz | IC=50mAdc, VCE=10Vdc, f=30MHz | 1 |+| Collector Current | IC | | | 1.5 | A | | 1 |+| Collector-Base Voltage | VCB | | | 40 | V | | 1 |+| Power Dissipation | PD | | | 0.3 | Watts | Tamb=25°C | 1 |+| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `MMSS8050-H-TP`
page.json+200−1@@ -151,6 +151,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6c551e2767350085",+ "rows": [+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC=100μAdc, IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 25,+ "typ": null,+ "max": null,+ "conditions": "IC=0.1mAdc, IB=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE=100μAdc, IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "μAdc",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VCB=40Vdc, IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter Cutoff Current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "μAdc",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VEB=5.0Vdc, IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(1)",+ "symbol": "hFE(1)",+ "kind": "electrical",+ "unit": "---",+ "min": 120,+ "typ": null,+ "max": 350,+ "conditions": "IC=100mAdc, VCE=1.0Vdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(1), Rank H (200-350)",+ "symbol": "hFE(1)",+ "kind": "electrical",+ "unit": "---",+ "min": 200,+ "typ": null,+ "max": 350,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(2)",+ "symbol": "hFE(2)",+ "kind": "electrical",+ "unit": "---",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC=800mAdc, VCE=1.0Vdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "IC=800mAdc, IB=80mAdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IC=800mAdc, IB=80mAdc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Voltage",+ "symbol": "VEB",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "IE=1.5Adc",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Transistor Frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC=50mAdc, VCE=10Vdc, f=30MHz",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCB",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "Watts",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "Tamb=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +391,4 @@ "visibility": { "public": true }-}+}