component

MMS8050-H-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmms8050-h-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers mms8050-h-hxy: viewers · Ray 17d ago
mms8050-h-hxy-etched.glb Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy-etched.step mms8050-h-hxy: factory component page (tier=lcsc) · Ray 17d ago
mms8050-h-hxy-hero.glb mms8050-h-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
mms8050-h-hxy-hero.overlay.json Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy.glb Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy.kicad_mod Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy.kicad_sym Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy.lbr Publish 0.1.0 · Ray 17d ago
mms8050-h-hxy.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

MMS8050-H-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

MMS8050-H-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; drives the device, with VEBO limited to 5 V.
2 E passive Emitter of the NPN transistor; VEBO max 5 V and VCEO max 25 V relative to collector.
3 C passive Collector of the NPN transistor; IC max 500 mA, VCBO 40 V, VCEO 25 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC=0.1mA, IE= 2
Collector-emitter breakdown voltage V(BR)CEO 25 V IC=1mA, IB= 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=0.1mA, IC= 2
Collector cut-off current ICBO 0.1 uA VCB=40V, IE= 2
Emitter cut-off current IEBO 0.1 uA VEB=5V, IC= 2
DC current gain hFE(1) hFE(1) 200 VCE=1V, IC= 2
DC current gain hFE(2) hFE(2) 40 VCE=1V, IC 2
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=500mA, IB= 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA, IB 2
Base-emitter voltage VBE 0.7 V VCB=1V, IC=10mA, 2
Transition frequency fT 150 MHz VCE=6V, IC=20mA, f=30MHz 2
Collector output capacitance Cob 8 pF VCB=6V, IE=0, f=1MHz 2
Collector-base voltage VCBO 40 V 1
Collector-emitter voltage VCEO 25 V 1
Emitter-base voltage VEBO 5 V 1
Collector current IC 500 mA 1
Collector power dissipation PC 350 mW Ta=25°C 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 416 ℃/W 1

CAD (KiCad official)

  • Symbol: MMS8050-H-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mms8050-h-hxy-etched.step / mms8050-h-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mms8050-h-hxy.step / mms8050-h-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 3ebacb9d31400e3f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF