component
MMS8050-H-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMS8050-H-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
MMS8050-H-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives the device, with VEBO limited to 5 V. |
| 2 | E | passive | Emitter of the NPN transistor; VEBO max 5 V and VCEO max 25 V relative to collector. |
| 3 | C | passive | Collector of the NPN transistor; IC max 500 mA, VCBO 40 V, VCEO 25 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=0.1mA, IE= | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mA, IB= | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=0.1mA, IC= | 2 | ||
| Collector cut-off current | ICBO | 0.1 | uA | VCB=40V, IE= | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC= | 2 | ||
| DC current gain hFE(1) | hFE(1) | 200 | VCE=1V, IC= | 2 | |||
| DC current gain hFE(2) | hFE(2) | 40 | VCE=1V, IC | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=500mA, IB= | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mA, IB | 2 | ||
| Base-emitter voltage | VBE | 0.7 | V | VCB=1V, IC=10mA, | 2 | ||
| Transition frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz | 2 | ||
| Collector output capacitance | Cob | 8 | pF | VCB=6V, IE=0, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | 40 | V | 1 | |||
| Collector-emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 500 | mA | 1 | |||
| Collector power dissipation | PC | 350 | mW | Ta=25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 416 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMS8050-H-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mms8050-h-hxy-etched.step/mms8050-h-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mms8050-h-hxy.step/mms8050-h-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
3ebacb9d31400e3f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).