# MMFTN2310

**ST Semtech** · MOSFETs · SOT-23

MMFTN2310 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for ±20 V gate voltage, with gate threshold of 1 V to 2.5 V and gate-source leakage of ±100 nA maximum at VGS = ±20 V. |
| 2 | Source | passive | Source of the N-channel MOSFET; body-diode forward voltage is 1.3 V maximum at VGS = 0 V and IS = 3 A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for 60 V drain-source voltage and 3 A continuous drain current (10 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Drain-Gate Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 3 | A |  | 1 |
| Peak Drain Current, Pulsed | IDM |  |  | 10 | A | Pulse width ≤ 100 μs, duty cycle ≤ 2% | 1 |
| Total Power Dissipation | Ptot |  |  | 1.38 | W | Device mounted on FR-4 PC board, 2oz copper, with 1-inch square copper plate | 1 |
| Total Power Dissipation | Ptot |  |  | 0.46 | W | Device mounted on FR-4 PC board, 2oz copper, with minimum recommended pad layout | 1 |
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 90 | ℃/W | Device mounted on FR-4 PC board, 2oz copper, with 1-inch square copper plate | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 270 | ℃/W | Device mounted on FR-4 PC board, 2oz copper, with minimum recommended pad layout | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | ID = 250 µA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | µA | VDS = 60 V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | VGS = VDS, ID = 250 μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 90 | mΩ | VGS = 10 V, ID = 3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 110 | mΩ | VGS = 4.5 V, ID = 3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 100 | mΩ | VGS = 4 V, ID = 1 A | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS = 0 V, IS = 3 A | 2 |

## CAD (KiCad official)

- Symbol: `MMFTN2310`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmftn2310-etched.step` / `mmftn2310-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmftn2310.step` / `mmftn2310.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ST Semtech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603065787033014272) (6 pp, sha256 `77b1b07e17981f00`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmftn2310-datasheet.pdf)