component
MMFTN2310
Public Made by Adomby adom
ST Semtech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMFTN2310
ST Semtech · MOSFETs · SOT-23
MMFTN2310 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for ±20 V gate voltage, with gate threshold of 1 V to 2.5 V and gate-source leakage of ±100 nA maximum at VGS = ±20 V. |
| 2 | Source | passive | Source of the N-channel MOSFET; body-diode forward voltage is 1.3 V maximum at VGS = 0 V and IS = 3 A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET, rated for 60 V drain-source voltage and 3 A continuous drain current (10 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Drain-Gate Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current - Continuous | ID | 3 | A | 1 | |||
| Peak Drain Current, Pulsed | IDM | 10 | A | Pulse width ≤ 100 μs, duty cycle ≤ 2% | 1 | ||
| Total Power Dissipation | Ptot | 1.38 | W | Device mounted on FR-4 PC board, 2oz copper, with 1-inch square copper plate | 1 | ||
| Total Power Dissipation | Ptot | 0.46 | W | Device mounted on FR-4 PC board, 2oz copper, with minimum recommended pad layout | 1 | ||
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 90 | ℃/W | Device mounted on FR-4 PC board, 2oz copper, with 1-inch square copper plate | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 270 | ℃/W | Device mounted on FR-4 PC board, 2oz copper, with minimum recommended pad layout | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | ID = 250 µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS = 60 V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS = VDS, ID = 250 μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 90 | mΩ | VGS = 10 V, ID = 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 110 | mΩ | VGS = 4.5 V, ID = 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 100 | mΩ | VGS = 4 V, ID = 1 A | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0 V, IS = 3 A | 2 |
CAD (KiCad official)
- Symbol:
MMFTN2310 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmftn2310-etched.step/mmftn2310-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmftn2310.step/mmftn2310.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (6 pp, sha256
77b1b07e17981f00, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).