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MMFTN123K

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ST Semtech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMFTN123K

ST Semtech · MOSFETs · SOT-23

MMFTN123K from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET, rated for a gate-source voltage VGSS of ±20 V, with gate-source leakage specified at ±10 µA maximum at VGS = ±20 V.
2 Source passive Source terminal of the N-channel enhancement MOSFET; the datasheet gives no pin-specific limit for this terminal, only device ratings such as VDSS of 100 V and drain current ID of 200 mA.
3 Drain passive Drain terminal of the N-channel enhancement MOSFET, rated for a drain-source voltage VDSS of 100 V and a drain current ID of 200 mA (pulsed IDM of 600 mA).

Key specifications

Parameter Value
Manufacturer ST Semtech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current ID 200 mA 1
Peak Drain Current, Pulsed IDM 600 mA Pulse Width ≤ 100 μs, Duty Cycle ≤ 2% 1
Total Power Dissipation Ptot 500 mW 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 250 ℃/W Device mounted on FR-4 PC board, 2oz copper, 1-inch square copper plate, still air 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V at ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA at VDS = 80 V 2
Gate-Source Leakage Current IGSS 10 µA at VGS = ± 20 V 2
Gate-Source Threshold Voltage VGS(th) 1.5 2.5 V at VGS = VDS, ID = 1 mA 2
Drain-Source On-State Resistance RDS(ON) 6 Ω at VGS = 10 V, ID = 190 mA 2
Drain-Source On-State Resistance RDS(ON) 10 Ω at VGS = 4.5 V, ID = 150 mA 2
Drain-Source Diode Forward Voltage VSD 1.2 V at IS = 0.1 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: MMFTN123K
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmftn123k-etched.step / mmftn123k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmftn123k.step / mmftn123k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ST Semtech datasheet (6 pp, sha256 ba150f343173e2cc, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF