component
MMFTN123K
Public Made by Adomby adom
ST Semtech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMFTN123K
ST Semtech · MOSFETs · SOT-23
MMFTN123K from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, rated for a gate-source voltage VGSS of ±20 V, with gate-source leakage specified at ±10 µA maximum at VGS = ±20 V. |
| 2 | Source | passive | Source terminal of the N-channel enhancement MOSFET; the datasheet gives no pin-specific limit for this terminal, only device ratings such as VDSS of 100 V and drain current ID of 200 mA. |
| 3 | Drain | passive | Drain terminal of the N-channel enhancement MOSFET, rated for a drain-source voltage VDSS of 100 V and a drain current ID of 200 mA (pulsed IDM of 600 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 200 | mA | 1 | |||
| Peak Drain Current, Pulsed | IDM | 600 | mA | Pulse Width ≤ 100 μs, Duty Cycle ≤ 2% | 1 | ||
| Total Power Dissipation | Ptot | 500 | mW | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 250 | ℃/W | Device mounted on FR-4 PC board, 2oz copper, 1-inch square copper plate, still air | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | at ID = 250 µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | at VDS = 80 V | 2 | ||
| Gate-Source Leakage Current | IGSS | 10 | µA | at VGS = ± 20 V | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | at VGS = VDS, ID = 1 mA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 6 | Ω | at VGS = 10 V, ID = 190 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 10 | Ω | at VGS = 4.5 V, ID = 150 mA | 2 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | at IS = 0.1 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
MMFTN123K - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmftn123k-etched.step/mmftn123k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmftn123k.step/mmftn123k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (6 pp, sha256
ba150f343173e2cc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).