component
MMDT5551-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMDT5551-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
MMDT5551-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (NPN); VEBO rating is 6 V. |
| 2 | B1 | passive | Base of transistor 1; emitter-base breakdown BVEBO is 6 V minimum. |
| 3 | C2 | passive | Collector of transistor 2; VCEO 160 V, VCBO 180 V, continuous IC 200 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (NPN); VEBO rating is 6 V. |
| 5 | B2 | passive | Base of transistor 2; emitter-base breakdown BVEBO is 6 V minimum. |
| 6 | C1 | passive | Collector of transistor 1; VCEO 160 V, VCBO 180 V, continuous IC 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 180 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | 160 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 2 | |||
| Continuous Collector Current | IC | 200 | mA | 2 | |||
| Power Dissipation | PD | 200 | mW | Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) | 2 | ||
| Power Dissipation | PD | 320 | mW | Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 390 | °C/W | Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 140 | °C/W | Note 8 (junction to top of package) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 180 | V | IC = 100µA, IE = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 160 | V | IC = 1mA, IB = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 10µA, IC = 0 | 3 | ||
| Collector-Base Cutoff Current | ICBO | 50 | nA | VCB = 120V, IE = 0 | 3 | ||
| Collector-Base Cutoff Current | ICBO | 50 | µA | VCB = 120V, IE = 0, TA = +100°C | 3 | ||
| Base-Emitter Cutoff Current | IEBO | 50 | nA | VEB = 4V, IC = 0 | 3 | ||
| DC Current Gain | hFE | 80 | IC = 1mA, VCE = 5.0V | 3 | |||
| DC Current Gain | hFE | 80 | 250 | IC = 10mA, VCE = 5.0V | 3 | ||
| DC Current Gain | hFE | 30 | IC = 50mA, VCE = 5.0V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC = 10mA, IB = 1.0mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC = 50mA, IB = 5.0mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC = 10mA, IB = 1.0mA; IC = 50mA, IB = 5.0mA | 3 | ||
| Output Capacitance | Cobo | 6 | pF | VCB = 10V, f = 1.0MHz, IE = 0 | 3 | ||
| Small Signal Current Gain | hfe | 50 | 250 | IC = 1mA, VCE = 10V, f = 1.0MHz | 3 | ||
| Current Gain-Bandwidth Product | fT | 100 | 300 | MHz | IC = 10mA, VCE = 10V, f = 100MHz | 3 | |
| Noise Figure | NF | 8 | dB | VCE = 5.0V, IC = 200µA, RS = 1kΩ, f = 1.0kHz | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish ⎯ Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
MMDT5551-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt5551-7-f-etched.step/mmdt5551-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt5551-7-f.step/mmdt5551-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
0cfcb76cdbec5d4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMDT5551-7-F
**Diodes Incorporated** · Bipolar (BJT) · SOT-363
MMDT5551-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (NPN); VEBO rating is 6 V. |
| 2 | B1 | passive | Base of transistor 1; emitter-base breakdown BVEBO is 6 V minimum. |
| 3 | C2 | passive | Collector of transistor 2; VCEO 160 V, VCBO 180 V, continuous IC 200 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (NPN); VEBO rating is 6 V. |
| 5 | B2 | passive | Base of transistor 2; emitter-base breakdown BVEBO is 6 V minimum. |
| 6 | C1 | passive | Collector of transistor 1; VCEO 160 V, VCBO 180 V, continuous IC 200 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 180 | V | | 2 |
| Collector-Emitter Voltage | VCEO | | | 160 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | 6 | V | | 2 |
| Continuous Collector Current | IC | | | 200 | mA | | 2 |
| Power Dissipation | PD | | | 200 | mW | Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) | 2 |
| Power Dissipation | PD | | | 320 | mW | Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 625 | | °C/W | Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 390 | | °C/W | Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) | 2 |
| Thermal Resistance, Junction to Case | RθJC | | 140 | | °C/W | Note 8 (junction to top of package) | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Collector-Base Breakdown Voltage | BVCBO | 180 | | | V | IC = 100µA, IE = 0 | 3 |
| Collector-Emitter Breakdown Voltage | BVCEO | 160 | | | V | IC = 1mA, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | | | V | IE = 10µA, IC = 0 | 3 |
| Collector-Base Cutoff Current | ICBO | | | 50 | nA | VCB = 120V, IE = 0 | 3 |
| Collector-Base Cutoff Current | ICBO | | | 50 | µA | VCB = 120V, IE = 0, TA = +100°C | 3 |
| Base-Emitter Cutoff Current | IEBO | | | 50 | nA | VEB = 4V, IC = 0 | 3 |
| DC Current Gain | hFE | 80 | | | | IC = 1mA, VCE = 5.0V | 3 |
| DC Current Gain | hFE | 80 | | 250 | | IC = 10mA, VCE = 5.0V | 3 |
| DC Current Gain | hFE | 30 | | | | IC = 50mA, VCE = 5.0V | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.15 | V | IC = 10mA, IB = 1.0mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.2 | V | IC = 50mA, IB = 5.0mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 1 | V | IC = 10mA, IB = 1.0mA; IC = 50mA, IB = 5.0mA | 3 |
| Output Capacitance | Cobo | | | 6 | pF | VCB = 10V, f = 1.0MHz, IE = 0 | 3 |
| Small Signal Current Gain | hfe | 50 | | 250 | | IC = 1mA, VCE = 10V, f = 1.0MHz | 3 |
| Current Gain-Bandwidth Product | fT | 100 | | 300 | MHz | IC = 10mA, VCE = 10V, f = 100MHz | 3 |
| Noise Figure | NF | | | 8 | dB | VCE = 5.0V, IC = 200µA, RS = 1kΩ, f = 1.0kHz | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Finish ⎯ Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `MMDT5551-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmdt5551-7-f-etched.step` / `mmdt5551-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmdt5551-7-f.step` / `mmdt5551-7-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8560094525545730048) (6 pp, sha256 `0cfcb76cdbec5d4a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmdt5551-7-f-datasheet.pdf)