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Contents

README

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MMDT5551-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

MMDT5551-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN); VEBO rating is 6 V.
2 B1 passive Base of transistor 1; emitter-base breakdown BVEBO is 6 V minimum.
3 C2 passive Collector of transistor 2; VCEO 160 V, VCBO 180 V, continuous IC 200 mA.
4 E2 passive Emitter of transistor 2 (NPN); VEBO rating is 6 V.
5 B2 passive Base of transistor 2; emitter-base breakdown BVEBO is 6 V minimum.
6 C1 passive Collector of transistor 1; VCEO 160 V, VCBO 180 V, continuous IC 200 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V 2
Collector-Emitter Voltage VCEO 160 V 2
Emitter-Base Voltage VEBO 6 V 2
Continuous Collector Current IC 200 mA 2
Power Dissipation PD 200 mW Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) 2
Power Dissipation PD 320 mW Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 5 (minimum recommended pad layout, 1oz Cu, single-sided FR4, still air) 2
Thermal Resistance, Junction to Ambient RθJA 390 °C/W Notes 6 & 7 (25mm x 25mm 2oz Cu; maximum combined dissipation) 2
Thermal Resistance, Junction to Case RθJC 140 °C/W Note 8 (junction to top of package) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 180 V IC = 100µA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 160 V IC = 1mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10µA, IC = 0 3
Collector-Base Cutoff Current ICBO 50 nA VCB = 120V, IE = 0 3
Collector-Base Cutoff Current ICBO 50 µA VCB = 120V, IE = 0, TA = +100°C 3
Base-Emitter Cutoff Current IEBO 50 nA VEB = 4V, IC = 0 3
DC Current Gain hFE 80 IC = 1mA, VCE = 5.0V 3
DC Current Gain hFE 80 250 IC = 10mA, VCE = 5.0V 3
DC Current Gain hFE 30 IC = 50mA, VCE = 5.0V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC = 10mA, IB = 1.0mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC = 50mA, IB = 5.0mA 3
Base-Emitter Saturation Voltage VBE(sat) 1 V IC = 10mA, IB = 1.0mA; IC = 50mA, IB = 5.0mA 3
Output Capacitance Cobo 6 pF VCB = 10V, f = 1.0MHz, IE = 0 3
Small Signal Current Gain hfe 50 250 IC = 1mA, VCE = 10V, f = 1.0MHz 3
Current Gain-Bandwidth Product fT 100 300 MHz IC = 10mA, VCE = 10V, f = 100MHz 3
Noise Figure NF 8 dB VCE = 5.0V, IC = 200µA, RS = 1kΩ, f = 1.0kHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish ⎯ Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMDT5551-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt5551-7-f-etched.step / mmdt5551-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt5551-7-f.step / mmdt5551-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 0cfcb76cdbec5d4a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF