component
MMDT4413-TP
Public Made by Adomby adom
MCC(Micro Commercial Components) Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMDT4413-TP
MCC(Micro Commercial Components) · Bipolar (BJT) · SOT-363
MMDT4413-TP from MCC(Micro Commercial Components), in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor (arrow pointing out of the symbol), rated VEBO 6 V and IC 600 mA for the NPN section. |
| 2 | B1 | input | Base of the NPN transistor; VBE(sat) is 0.75 V min to 0.95 V max at IC=150 mA, IB=15 mA. |
| 3 | C2 | passive | Collector of the PNP transistor, rated VCEO -40 V, VCBO -40 V and IC -600 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor (arrow pointing into the symbol), rated VEBO -5 V. |
| 5 | B2 | input | Base of the PNP transistor; VBE(sat) is -0.75 V min to -0.95 V max at IC=-150 mA, IB=-15 mA. |
| 6 | C1 | passive | Collector of the NPN transistor, rated VCEO 40 V, VCBO 60 V and IC 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Emitter Voltage | VCEO | 40 | V | @ 25°C | 1 | ||
| NPN Emitter-Base Voltage | VEBO | 6 | V | @ 25°C | 1 | ||
| NPN Continuous Collector Current | IC | 600 | mA | @ 25°C | 1 | ||
| PNP Collector-Base Voltage | VCBO | -40 | V | @ 25°C | 1 | ||
| PNP Collector-Emitter Voltage | VCEO | -40 | V | @ 25°C | 1 | ||
| PNP Emitter-Base Voltage | VEBO | -5 | V | @ 25°C | 1 | ||
| PNP Continuous Collector Current | IC | -600 | mA | @ 25°C | 1 | ||
| Power Dissipation | PD | 200 | mW | @ 25°C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 625 | °C/W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| NPN Collector-Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=100µA, IE=0 | 2 | ||
| NPN Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC=1mA, IB=0 | 2 | ||
| NPN Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=100µA, IC=0 | 2 | ||
| NPN Collector Cutoff Current | ICBO | 100 | nA | VCB=50V, IE=0 | 2 | ||
| NPN Emitter Cutoff Current | IEBO | 100 | nA | VEB=5V, IC=0 | 2 | ||
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | V | IC=150mA, IB=15mA | 2 | ||
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | V | IC=500mA, IB=50mA | 2 | ||
| NPN Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | 0.95 | V | IC=150mA, IB=15mA | 2 | |
| NPN Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=500mA, IB=50mA | 2 | ||
| NPN DC Current Gain hFE(1) | hFE(1) | 20 | VCE=1V, IC=0.1mA | 2 | |||
| NPN DC Current Gain hFE(2) | hFE(2) | 40 | VCE=1V, IC=1mA | 2 | |||
| NPN DC Current Gain hFE(3) | hFE(3) | 80 | VCE=1V, IC=10mA | 2 | |||
| NPN DC Current Gain hFE(4) | hFE(4) | 100 | 300 | VCE=1V, IC=150mA | 2 | ||
| NPN DC Current Gain hFE(5) | hFE(5) | 40 | VCE=2V, IC=500mA | 2 | |||
| NPN Transition Frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 2 | ||
| NPN Output Capacitance | Cob | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 2 | ||
| NPN Delay Time | td | 15 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 2 | ||
| NPN Rise Time | tr | 20 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 2 | ||
| NPN Storage Time | ts | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 | ||
| NPN Fall Time | tf | 30 | ns | 2 | |||
| PNP Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC=-100µA, IE=0 | 3 | ||
| PNP Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | 3 | ||
| PNP Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100µA, IC=0 | 3 | ||
| PNP Collector Cutoff Current | ICBO | -100 | nA | VCB=-50V, IE=0 | 3 | ||
| PNP Emitter Cutoff Current | IEBO | -100 | nA | VEB=-5V, IC=0 | 3 | ||
| PNP DC Current Gain hFE(1) | hFE(1) | 30 | VCE=-1V, IC=-0.1mA | 3 | |||
| PNP DC Current Gain hFE(2) | hFE(2) | 60 | VCE=-1V, IC=-1mA | 3 | |||
| PNP DC Current Gain hFE(3) | hFE(3) | 100 | VCE=-1V, IC=-10mA | 3 | |||
| PNP DC Current Gain hFE(4) | hFE(4) | 100 | 300 | VCE=-2V, IC=-150mA | 3 | ||
| PNP DC Current Gain hFE(5) | hFE(5) | 20 | VCE=-2V, IC=-500mA | 3 | |||
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | V | IC=-150mA, IB=-15mA | 3 | ||
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.75 | V | IC=-500mA, IB=-50mA | 3 | ||
| PNP Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | -0.75 | V | IC=-150mA, IB=-15mA | 3 | |
| PNP Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | V | IC=-500mA, IB=-50mA | 3 | ||
| PNP Transition Frequency | fT | 200 | MHz | VCE=-10V, IC=-20mA, f=100MHz | 3 | ||
| PNP Output Capacitance | Cob | 8.5 | pF | VCB=-10V, IE=0, f=1MHz | 3 | ||
| PNP Delay Time | td | 15 | ns | VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA | 3 | ||
| PNP Rise Time | tr | 20 | ns | VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA | 3 | ||
| PNP Storage Time | ts | 225 | ns | VCC=-30V, IC=-150mA, IB1=-IB2=-15mA | 3 | ||
| PNP Fall Time | tf | 30 | ns | 3 |
CAD (KiCad official)
- Symbol:
MMDT4413-TP - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt4413-tp-etched.step/mmdt4413-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt4413-tp.step/mmdt4413-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(Micro Commercial Components) datasheet (6 pp, sha256
8c0559aa20ef11f3, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMDT4413-TP
**MCC(Micro Commercial Components)** · Bipolar (BJT) · SOT-363
MMDT4413-TP from MCC(Micro Commercial Components), in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the NPN transistor (arrow pointing out of the symbol), rated VEBO 6 V and IC 600 mA for the NPN section. |
| 2 | B1 | input | Base of the NPN transistor; VBE(sat) is 0.75 V min to 0.95 V max at IC=150 mA, IB=15 mA. |
| 3 | C2 | passive | Collector of the PNP transistor, rated VCEO -40 V, VCBO -40 V and IC -600 mA. |
| 4 | E2 | passive | Emitter of the PNP transistor (arrow pointing into the symbol), rated VEBO -5 V. |
| 5 | B2 | input | Base of the PNP transistor; VBE(sat) is -0.75 V min to -0.95 V max at IC=-150 mA, IB=-15 mA. |
| 6 | C1 | passive | Collector of the NPN transistor, rated VCEO 40 V, VCBO 60 V and IC 600 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(Micro Commercial Components) |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Emitter Voltage | VCEO | | | 40 | V | @ 25°C | 1 |
| NPN Emitter-Base Voltage | VEBO | | | 6 | V | @ 25°C | 1 |
| NPN Continuous Collector Current | IC | | | 600 | mA | @ 25°C | 1 |
| PNP Collector-Base Voltage | VCBO | -40 | | | V | @ 25°C | 1 |
| PNP Collector-Emitter Voltage | VCEO | -40 | | | V | @ 25°C | 1 |
| PNP Emitter-Base Voltage | VEBO | -5 | | | V | @ 25°C | 1 |
| PNP Continuous Collector Current | IC | -600 | | | mA | @ 25°C | 1 |
| Power Dissipation | PD | | | 200 | mW | @ 25°C | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 625 | °C/W | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| NPN Collector-Base Breakdown Voltage | V(BR)CBO | 60 | | | V | IC=100µA, IE=0 | 2 |
| NPN Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | | | V | IC=1mA, IB=0 | 2 |
| NPN Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | | | V | IE=100µA, IC=0 | 2 |
| NPN Collector Cutoff Current | ICBO | | | 100 | nA | VCB=50V, IE=0 | 2 |
| NPN Emitter Cutoff Current | IEBO | | | 100 | nA | VEB=5V, IC=0 | 2 |
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.4 | V | IC=150mA, IB=15mA | 2 |
| NPN Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.75 | V | IC=500mA, IB=50mA | 2 |
| NPN Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | | 0.95 | V | IC=150mA, IB=15mA | 2 |
| NPN Base-Emitter Saturation Voltage | VBE(sat) | | | 1.2 | V | IC=500mA, IB=50mA | 2 |
| NPN DC Current Gain hFE(1) | hFE(1) | 20 | | | | VCE=1V, IC=0.1mA | 2 |
| NPN DC Current Gain hFE(2) | hFE(2) | 40 | | | | VCE=1V, IC=1mA | 2 |
| NPN DC Current Gain hFE(3) | hFE(3) | 80 | | | | VCE=1V, IC=10mA | 2 |
| NPN DC Current Gain hFE(4) | hFE(4) | 100 | | 300 | | VCE=1V, IC=150mA | 2 |
| NPN DC Current Gain hFE(5) | hFE(5) | 40 | | | | VCE=2V, IC=500mA | 2 |
| NPN Transition Frequency | fT | 250 | | | MHz | VCE=10V, IC=20mA, f=100MHz | 2 |
| NPN Output Capacitance | Cob | | | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 2 |
| NPN Delay Time | td | | | 15 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 2 |
| NPN Rise Time | tr | | | 20 | ns | VCC=30V, IC=150mA, VBE=2V, IB1=15mA | 2 |
| NPN Storage Time | ts | | | 225 | ns | VCC=30V, IC=150mA, IB1=-IB2=15mA | 2 |
| NPN Fall Time | tf | | | 30 | ns | | 2 |
| PNP Collector-Base Breakdown Voltage | V(BR)CBO | -40 | | | V | IC=-100µA, IE=0 | 3 |
| PNP Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | | | V | IC=-1mA, IB=0 | 3 |
| PNP Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE=-100µA, IC=0 | 3 |
| PNP Collector Cutoff Current | ICBO | -100 | | | nA | VCB=-50V, IE=0 | 3 |
| PNP Emitter Cutoff Current | IEBO | -100 | | | nA | VEB=-5V, IC=0 | 3 |
| PNP DC Current Gain hFE(1) | hFE(1) | 30 | | | | VCE=-1V, IC=-0.1mA | 3 |
| PNP DC Current Gain hFE(2) | hFE(2) | 60 | | | | VCE=-1V, IC=-1mA | 3 |
| PNP DC Current Gain hFE(3) | hFE(3) | 100 | | | | VCE=-1V, IC=-10mA | 3 |
| PNP DC Current Gain hFE(4) | hFE(4) | 100 | | 300 | | VCE=-2V, IC=-150mA | 3 |
| PNP DC Current Gain hFE(5) | hFE(5) | 20 | | | | VCE=-2V, IC=-500mA | 3 |
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | | | V | IC=-150mA, IB=-15mA | 3 |
| PNP Collector-Emitter Saturation Voltage | VCE(sat) | -0.75 | | | V | IC=-500mA, IB=-50mA | 3 |
| PNP Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | | -0.75 | V | IC=-150mA, IB=-15mA | 3 |
| PNP Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | | | V | IC=-500mA, IB=-50mA | 3 |
| PNP Transition Frequency | fT | 200 | | | MHz | VCE=-10V, IC=-20mA, f=100MHz | 3 |
| PNP Output Capacitance | Cob | | | 8.5 | pF | VCB=-10V, IE=0, f=1MHz | 3 |
| PNP Delay Time | td | | | 15 | ns | VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA | 3 |
| PNP Rise Time | tr | | | 20 | ns | VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA | 3 |
| PNP Storage Time | ts | | | 225 | ns | VCC=-30V, IC=-150mA, IB1=-IB2=-15mA | 3 |
| PNP Fall Time | tf | | | 30 | ns | | 3 |
## CAD (KiCad official)
- Symbol: `MMDT4413-TP`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmdt4413-tp-etched.step` / `mmdt4413-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmdt4413-tp.step` / `mmdt4413-tp.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MCC(Micro Commercial Components) datasheet](docs/mmdt4413-tp-datasheet.pdf) (6 pp, sha256 `8c0559aa20ef11f3`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmdt4413-tp-datasheet.pdf)