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MMDT4413-TP

MCC(Micro Commercial Components) · Bipolar (BJT) · SOT-363

MMDT4413-TP from MCC(Micro Commercial Components), in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN transistor (arrow pointing out of the symbol), rated VEBO 6 V and IC 600 mA for the NPN section.
2 B1 input Base of the NPN transistor; VBE(sat) is 0.75 V min to 0.95 V max at IC=150 mA, IB=15 mA.
3 C2 passive Collector of the PNP transistor, rated VCEO -40 V, VCBO -40 V and IC -600 mA.
4 E2 passive Emitter of the PNP transistor (arrow pointing into the symbol), rated VEBO -5 V.
5 B2 input Base of the PNP transistor; VBE(sat) is -0.75 V min to -0.95 V max at IC=-150 mA, IB=-15 mA.
6 C1 passive Collector of the NPN transistor, rated VCEO 40 V, VCBO 60 V and IC 600 mA.

Key specifications

Parameter Value
Manufacturer MCC(Micro Commercial Components)
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Emitter Voltage VCEO 40 V @ 25°C 1
NPN Emitter-Base Voltage VEBO 6 V @ 25°C 1
NPN Continuous Collector Current IC 600 mA @ 25°C 1
PNP Collector-Base Voltage VCBO -40 V @ 25°C 1
PNP Collector-Emitter Voltage VCEO -40 V @ 25°C 1
PNP Emitter-Base Voltage VEBO -5 V @ 25°C 1
PNP Continuous Collector Current IC -600 mA @ 25°C 1
Power Dissipation PD 200 mW @ 25°C 1
Thermal Resistance Junction to Ambient RθJA 625 °C/W 1
Operating Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
NPN Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=100µA, IE=0 2
NPN Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA, IB=0 2
NPN Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µA, IC=0 2
NPN Collector Cutoff Current ICBO 100 nA VCB=50V, IE=0 2
NPN Emitter Cutoff Current IEBO 100 nA VEB=5V, IC=0 2
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=150mA, IB=15mA 2
NPN Collector-Emitter Saturation Voltage VCE(sat) 0.75 V IC=500mA, IB=50mA 2
NPN Base-Emitter Saturation Voltage VBE(sat) 0.75 0.95 V IC=150mA, IB=15mA 2
NPN Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=500mA, IB=50mA 2
NPN DC Current Gain hFE(1) hFE(1) 20 VCE=1V, IC=0.1mA 2
NPN DC Current Gain hFE(2) hFE(2) 40 VCE=1V, IC=1mA 2
NPN DC Current Gain hFE(3) hFE(3) 80 VCE=1V, IC=10mA 2
NPN DC Current Gain hFE(4) hFE(4) 100 300 VCE=1V, IC=150mA 2
NPN DC Current Gain hFE(5) hFE(5) 40 VCE=2V, IC=500mA 2
NPN Transition Frequency fT 250 MHz VCE=10V, IC=20mA, f=100MHz 2
NPN Output Capacitance Cob 6.5 pF VCB=5V, IE=0, f=1MHz 2
NPN Delay Time td 15 ns VCC=30V, IC=150mA, VBE=2V, IB1=15mA 2
NPN Rise Time tr 20 ns VCC=30V, IC=150mA, VBE=2V, IB1=15mA 2
NPN Storage Time ts 225 ns VCC=30V, IC=150mA, IB1=-IB2=15mA 2
NPN Fall Time tf 30 ns 2
PNP Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-100µA, IE=0 3
PNP Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-1mA, IB=0 3
PNP Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=0 3
PNP Collector Cutoff Current ICBO -100 nA VCB=-50V, IE=0 3
PNP Emitter Cutoff Current IEBO -100 nA VEB=-5V, IC=0 3
PNP DC Current Gain hFE(1) hFE(1) 30 VCE=-1V, IC=-0.1mA 3
PNP DC Current Gain hFE(2) hFE(2) 60 VCE=-1V, IC=-1mA 3
PNP DC Current Gain hFE(3) hFE(3) 100 VCE=-1V, IC=-10mA 3
PNP DC Current Gain hFE(4) hFE(4) 100 300 VCE=-2V, IC=-150mA 3
PNP DC Current Gain hFE(5) hFE(5) 20 VCE=-2V, IC=-500mA 3
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.4 V IC=-150mA, IB=-15mA 3
PNP Collector-Emitter Saturation Voltage VCE(sat) -0.75 V IC=-500mA, IB=-50mA 3
PNP Base-Emitter Saturation Voltage VBE(sat) -0.95 -0.75 V IC=-150mA, IB=-15mA 3
PNP Base-Emitter Saturation Voltage VBE(sat) -1.3 V IC=-500mA, IB=-50mA 3
PNP Transition Frequency fT 200 MHz VCE=-10V, IC=-20mA, f=100MHz 3
PNP Output Capacitance Cob 8.5 pF VCB=-10V, IE=0, f=1MHz 3
PNP Delay Time td 15 ns VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA 3
PNP Rise Time tr 20 ns VCC=-30V, IC=-150mA, VBE=-2V, IB1=-15mA 3
PNP Storage Time ts 225 ns VCC=-30V, IC=-150mA, IB1=-IB2=-15mA 3
PNP Fall Time tf 30 ns 3

CAD (KiCad official)

  • Symbol: MMDT4413-TP
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt4413-tp-etched.step / mmdt4413-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt4413-tp.step / mmdt4413-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC(Micro Commercial Components) datasheet (6 pp, sha256 8c0559aa20ef11f3, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF