component
MMDT4413-7-F
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MMDT4413-7-F
Diodes Incorporated · Bipolar (BJT) · SOT-363
MMDT4413-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the internally isolated NPN 4401 transistor (Q1); the NPN section has VEBO 6 V and IC 600 mA absolute maximum ratings. |
| 2 | B1 | passive | Base of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and VCEO 40 V absolute maximum ratings. |
| 3 | C2 | passive | Collector of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCBO -40 V and IC -600 mA absolute maximum ratings. |
| 4 | E2 | passive | Emitter of the internally isolated PNP 4403 transistor (Q2); the PNP section has VEBO -5 V absolute maximum rating. |
| 5 | B2 | passive | Base of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCEO -40 V absolute maximum rating. |
| 6 | C1 | passive | Collector of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and IC 600 mA absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 100µA, IE = 0 | 3 | ||
| NPN Collector-Emitter Breakdown Voltage | BVCEO | 40 | V | IC = 1.0mA, IB = 0 | 3 | ||
| NPN Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100 µA, IC = 0 | 3 | ||
| NPN Collector Cutoff Current | ICEX | 100 | nA | VCE = 35V, VEB(OFF) = 0.4V | 3 | ||
| NPN Base Cutoff Current | IBL | 100 | nA | VCE = 35V, VEB(OFF) = 0.4V | 3 | ||
| NPN DC Current Gain | hFE | 20 | IC = 100µA, VCE = 1.0V | 3 | |||
| NPN DC Current Gain | hFE | 40 | IC = 1.0mA, VCE = 1.0V | 3 | |||
| NPN DC Current Gain | hFE | 80 | IC = 10mA, VCE = 1.0V | 3 | |||
| NPN DC Current Gain | hFE | 100 | IC = 150mA, VCE = 1.0V | 3 | |||
| NPN DC Current Gain (upper limit) | hFE | 300 | 3 | ||||
| NPN Collector-Emitter Saturation Voltage | VCE(SAT) | 0.4 | V | IC = 150mA, IB = 15mA | 3 | ||
| NPN Collector-Emitter Saturation Voltage | VCE(SAT) | 0.75 | V | IC = 500mA, IB = 50mA | 3 | ||
| NPN Base-Emitter Saturation Voltage | VBE(SAT) | 0.75 | 0.95 | V | IC = 150mA, IB = 15mA | 3 | |
| NPN Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC = 500mA, IB = 50mA | 3 | ||
| NPN Output Capacitance | Ccb | 6.5 | pF | VCB = 5.0V, f = 1.0MHz, IE = 0 | 3 | ||
| NPN Input Capacitance | Ceb | 30 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 3 | ||
| NPN Input Impedance | hie | 1 | 15 | k | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 | |
| NPN Small Signal Current Gain | hfe | 40 | 500 | 3 | |||
| NPN Current Gain-Bandwidth Product | fT | 250 | MHz | VCE = 10V, IC = 20mA, f = 100MHz | 3 | ||
| NPN Delay Time | td | 15 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA | 3 | ||
| NPN Rise Time | tr | 20 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA | 3 | ||
| NPN Storage Time | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 | ||
| NPN Fall Time | tf | 30 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 | ||
| NPN Collector-Base Voltage (4401) | VCBO | 60 | V | @TA = +25°C | 2 | ||
| NPN Collector-Emitter Voltage (4401) | VCEO | 40 | V | @TA = +25°C | 2 | ||
| NPN Emitter-Base Voltage (4401) | VEBO | 6 | V | @TA = +25°C | 2 | ||
| NPN Collector Current (4401) | IC | 600 | mA | @TA = +25°C | 2 | ||
| PNP Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -100µA, IE = 0 | 5 | ||
| PNP Collector-Emitter Breakdown Voltage | BVCEO | -40 | V | IC = -1.0mA, IB = 0 | 5 | ||
| PNP Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -100µA, IC = 0 | 5 | ||
| PNP Collector Cutoff Current | ICEX | -100 | nA | VCE = -35V, VEB(OFF) = -0.4V | 5 | ||
| PNP Base Cutoff Current | IBL | -100 | nA | VCE = -35V, VEB(OFF) = -0.4V | 5 | ||
| PNP DC Current Gain | hFE | 30 | IC = -100µA, VCE = -1.0V | 5 | |||
| PNP DC Current Gain | hFE | 60 | IC = -1.0mA, VCE = -1.0V | 5 | |||
| PNP DC Current Gain | hFE | 100 | IC = -10mA, VCE = -1.0V | 5 | |||
| PNP DC Current Gain | hFE | 20 | IC = -500mA, VCE = -2.0V | 5 | |||
| PNP DC Current Gain (upper limit) | hFE | 300 | 5 | ||||
| PNP Collector-Emitter Saturation Voltage | VCE(SAT) | -0.4 | V | IC = -150mA, IB = -15mA | 5 | ||
| PNP Collector-Emitter Saturation Voltage | VCE(SAT) | -0.75 | V | IC = -500mA, IB = -50mA | 5 | ||
| PNP Base-Emitter Saturation Voltage | VBE(SAT) | -0.75 | -0.95 | V | IC = -150mA, IB = -15mA | 5 | |
| PNP Base-Emitter Saturation Voltage | VBE(SAT) | -1.3 | V | IC = -500mA, IB = -50mA | 5 | ||
| PNP Output Capacitance | Ccb | 8.5 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 5 | ||
| PNP Input Capacitance | Ceb | 30 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 | 5 | ||
| PNP Input Impedance | hie | 1.5 | 15 | k | VCE = -10V, IC = -1.0mA, f = 1.0kHz | 5 | |
| PNP Small Signal Current Gain | hfe | 60 | 500 | 5 | |||
| PNP Current Gain-Bandwidth Product | fT | 200 | MHz | VCE = -10V, IC = -20mA, f = 100MHz | 5 | ||
| PNP Delay Time | td | 15 | ns | VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA | 5 | ||
| PNP Rise Time | tr | 20 | ns | VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA | 5 | ||
| PNP Storage Time | ts | 225 | ns | VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA | 5 | ||
| PNP Fall Time | tf | 30 | ns | VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA | 5 | ||
| PNP Collector-Base Voltage (4403) | VCBO | -40 | V | @TA = +25°C | 2 | ||
| PNP Collector-Emitter Voltage (4403) | VCEO | -40 | V | @TA = +25°C | 2 | ||
| PNP Emitter-Base Voltage (4403) | VEBO | -5 | V | @TA = +25°C | 2 | ||
| PNP Collector Current (4403) | IC | -600 | mA | @TA = +25°C | 2 | ||
| Power Dissipation, Total Device | PD | 200 | mW | Total device; Note 5: minimum recommended pad layout, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 625 | °C/W | Note 5: minimum recommended pad layout, still air | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -65 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
MMDT4413-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt4413-7-f-etched.step/mmdt4413-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt4413-7-f.step/mmdt4413-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
d7ed7afcb201445d, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMDT4413-7-F
**Diodes Incorporated** · Bipolar (BJT) · SOT-363
MMDT4413-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of the internally isolated NPN 4401 transistor (Q1); the NPN section has VEBO 6 V and IC 600 mA absolute maximum ratings. |
| 2 | B1 | passive | Base of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and VCEO 40 V absolute maximum ratings. |
| 3 | C2 | passive | Collector of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCBO -40 V and IC -600 mA absolute maximum ratings. |
| 4 | E2 | passive | Emitter of the internally isolated PNP 4403 transistor (Q2); the PNP section has VEBO -5 V absolute maximum rating. |
| 5 | B2 | passive | Base of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCEO -40 V absolute maximum rating. |
| 6 | C1 | passive | Collector of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and IC 600 mA absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| NPN Collector-Base Breakdown Voltage | BVCBO | 60 | | | V | IC = 100µA, IE = 0 | 3 |
| NPN Collector-Emitter Breakdown Voltage | BVCEO | 40 | | | V | IC = 1.0mA, IB = 0 | 3 |
| NPN Emitter-Base Breakdown Voltage | BVEBO | 6 | | | V | IE = 100 µA, IC = 0 | 3 |
| NPN Collector Cutoff Current | ICEX | | | 100 | nA | VCE = 35V, VEB(OFF) = 0.4V | 3 |
| NPN Base Cutoff Current | IBL | | | 100 | nA | VCE = 35V, VEB(OFF) = 0.4V | 3 |
| NPN DC Current Gain | hFE | 20 | | | | IC = 100µA, VCE = 1.0V | 3 |
| NPN DC Current Gain | hFE | 40 | | | | IC = 1.0mA, VCE = 1.0V | 3 |
| NPN DC Current Gain | hFE | 80 | | | | IC = 10mA, VCE = 1.0V | 3 |
| NPN DC Current Gain | hFE | 100 | | | | IC = 150mA, VCE = 1.0V | 3 |
| NPN DC Current Gain (upper limit) | hFE | | | 300 | | | 3 |
| NPN Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.4 | V | IC = 150mA, IB = 15mA | 3 |
| NPN Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.75 | V | IC = 500mA, IB = 50mA | 3 |
| NPN Base-Emitter Saturation Voltage | VBE(SAT) | 0.75 | | 0.95 | V | IC = 150mA, IB = 15mA | 3 |
| NPN Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.2 | V | IC = 500mA, IB = 50mA | 3 |
| NPN Output Capacitance | Ccb | | | 6.5 | pF | VCB = 5.0V, f = 1.0MHz, IE = 0 | 3 |
| NPN Input Capacitance | Ceb | | | 30 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 3 |
| NPN Input Impedance | hie | 1 | | 15 | k | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 |
| NPN Small Signal Current Gain | hfe | 40 | | 500 | | | 3 |
| NPN Current Gain-Bandwidth Product | fT | 250 | | | MHz | VCE = 10V, IC = 20mA, f = 100MHz | 3 |
| NPN Delay Time | td | | | 15 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA | 3 |
| NPN Rise Time | tr | | | 20 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA | 3 |
| NPN Storage Time | ts | | | 225 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 |
| NPN Fall Time | tf | | | 30 | ns | VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA | 3 |
| NPN Collector-Base Voltage (4401) | VCBO | | | 60 | V | @TA = +25°C | 2 |
| NPN Collector-Emitter Voltage (4401) | VCEO | | | 40 | V | @TA = +25°C | 2 |
| NPN Emitter-Base Voltage (4401) | VEBO | | | 6 | V | @TA = +25°C | 2 |
| NPN Collector Current (4401) | IC | | | 600 | mA | @TA = +25°C | 2 |
| PNP Collector-Base Breakdown Voltage | BVCBO | -40 | | | V | IC = -100µA, IE = 0 | 5 |
| PNP Collector-Emitter Breakdown Voltage | BVCEO | -40 | | | V | IC = -1.0mA, IB = 0 | 5 |
| PNP Emitter-Base Breakdown Voltage | BVEBO | -5 | | | V | IE = -100µA, IC = 0 | 5 |
| PNP Collector Cutoff Current | ICEX | | | -100 | nA | VCE = -35V, VEB(OFF) = -0.4V | 5 |
| PNP Base Cutoff Current | IBL | | | -100 | nA | VCE = -35V, VEB(OFF) = -0.4V | 5 |
| PNP DC Current Gain | hFE | 30 | | | | IC = -100µA, VCE = -1.0V | 5 |
| PNP DC Current Gain | hFE | 60 | | | | IC = -1.0mA, VCE = -1.0V | 5 |
| PNP DC Current Gain | hFE | 100 | | | | IC = -10mA, VCE = -1.0V | 5 |
| PNP DC Current Gain | hFE | 20 | | | | IC = -500mA, VCE = -2.0V | 5 |
| PNP DC Current Gain (upper limit) | hFE | | | 300 | | | 5 |
| PNP Collector-Emitter Saturation Voltage | VCE(SAT) | | | -0.4 | V | IC = -150mA, IB = -15mA | 5 |
| PNP Collector-Emitter Saturation Voltage | VCE(SAT) | | | -0.75 | V | IC = -500mA, IB = -50mA | 5 |
| PNP Base-Emitter Saturation Voltage | VBE(SAT) | -0.75 | | -0.95 | V | IC = -150mA, IB = -15mA | 5 |
| PNP Base-Emitter Saturation Voltage | VBE(SAT) | | | -1.3 | V | IC = -500mA, IB = -50mA | 5 |
| PNP Output Capacitance | Ccb | | | 8.5 | pF | VCB = -10V, f = 1.0MHz, IE = 0 | 5 |
| PNP Input Capacitance | Ceb | | | 30 | pF | VEB = -0.5V, f = 1.0MHz, IC = 0 | 5 |
| PNP Input Impedance | hie | 1.5 | | 15 | k | VCE = -10V, IC = -1.0mA, f = 1.0kHz | 5 |
| PNP Small Signal Current Gain | hfe | 60 | | 500 | | | 5 |
| PNP Current Gain-Bandwidth Product | fT | 200 | | | MHz | VCE = -10V, IC = -20mA, f = 100MHz | 5 |
| PNP Delay Time | td | | | 15 | ns | VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA | 5 |
| PNP Rise Time | tr | | | 20 | ns | VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA | 5 |
| PNP Storage Time | ts | | | 225 | ns | VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA | 5 |
| PNP Fall Time | tf | | | 30 | ns | VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA | 5 |
| PNP Collector-Base Voltage (4403) | VCBO | | | -40 | V | @TA = +25°C | 2 |
| PNP Collector-Emitter Voltage (4403) | VCEO | | | -40 | V | @TA = +25°C | 2 |
| PNP Emitter-Base Voltage (4403) | VEBO | | | -5 | V | @TA = +25°C | 2 |
| PNP Collector Current (4403) | IC | | | -600 | mA | @TA = +25°C | 2 |
| Power Dissipation, Total Device | PD | | | 200 | mW | Total device; Note 5: minimum recommended pad layout, still air | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 625 | °C/W | Note 5: minimum recommended pad layout, still air | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 | | 150 | °C | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `MMDT4413-7-F`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `mmdt4413-7-f-etched.step` / `mmdt4413-7-f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmdt4413-7-f.step` / `mmdt4413-7-f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918295999492096) (8 pp, sha256 `d7ed7afcb201445d`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmdt4413-7-f-datasheet.pdf)