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MMDT4413-7-F

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Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT4413-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

MMDT4413-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the internally isolated NPN 4401 transistor (Q1); the NPN section has VEBO 6 V and IC 600 mA absolute maximum ratings.
2 B1 passive Base of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and VCEO 40 V absolute maximum ratings.
3 C2 passive Collector of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCBO -40 V and IC -600 mA absolute maximum ratings.
4 E2 passive Emitter of the internally isolated PNP 4403 transistor (Q2); the PNP section has VEBO -5 V absolute maximum rating.
5 B2 passive Base of the internally isolated PNP 4403 transistor (Q2); the PNP section has VCEO -40 V absolute maximum rating.
6 C1 passive Collector of the internally isolated NPN 4401 transistor (Q1); the NPN section has VCBO 60 V and IC 600 mA absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Base Breakdown Voltage BVCBO 60 V IC = 100µA, IE = 0 3
NPN Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 1.0mA, IB = 0 3
NPN Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100 µA, IC = 0 3
NPN Collector Cutoff Current ICEX 100 nA VCE = 35V, VEB(OFF) = 0.4V 3
NPN Base Cutoff Current IBL 100 nA VCE = 35V, VEB(OFF) = 0.4V 3
NPN DC Current Gain hFE 20 IC = 100µA, VCE = 1.0V 3
NPN DC Current Gain hFE 40 IC = 1.0mA, VCE = 1.0V 3
NPN DC Current Gain hFE 80 IC = 10mA, VCE = 1.0V 3
NPN DC Current Gain hFE 100 IC = 150mA, VCE = 1.0V 3
NPN DC Current Gain (upper limit) hFE 300 3
NPN Collector-Emitter Saturation Voltage VCE(SAT) 0.4 V IC = 150mA, IB = 15mA 3
NPN Collector-Emitter Saturation Voltage VCE(SAT) 0.75 V IC = 500mA, IB = 50mA 3
NPN Base-Emitter Saturation Voltage VBE(SAT) 0.75 0.95 V IC = 150mA, IB = 15mA 3
NPN Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 500mA, IB = 50mA 3
NPN Output Capacitance Ccb 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 3
NPN Input Capacitance Ceb 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 3
NPN Input Impedance hie 1 15 k VCE = 10V, IC = 1.0mA, f = 1.0kHz 3
NPN Small Signal Current Gain hfe 40 500 3
NPN Current Gain-Bandwidth Product fT 250 MHz VCE = 10V, IC = 20mA, f = 100MHz 3
NPN Delay Time td 15 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 3
NPN Rise Time tr 20 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA 3
NPN Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3
NPN Fall Time tf 30 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3
NPN Collector-Base Voltage (4401) VCBO 60 V @TA = +25°C 2
NPN Collector-Emitter Voltage (4401) VCEO 40 V @TA = +25°C 2
NPN Emitter-Base Voltage (4401) VEBO 6 V @TA = +25°C 2
NPN Collector Current (4401) IC 600 mA @TA = +25°C 2
PNP Collector-Base Breakdown Voltage BVCBO -40 V IC = -100µA, IE = 0 5
PNP Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -1.0mA, IB = 0 5
PNP Emitter-Base Breakdown Voltage BVEBO -5 V IE = -100µA, IC = 0 5
PNP Collector Cutoff Current ICEX -100 nA VCE = -35V, VEB(OFF) = -0.4V 5
PNP Base Cutoff Current IBL -100 nA VCE = -35V, VEB(OFF) = -0.4V 5
PNP DC Current Gain hFE 30 IC = -100µA, VCE = -1.0V 5
PNP DC Current Gain hFE 60 IC = -1.0mA, VCE = -1.0V 5
PNP DC Current Gain hFE 100 IC = -10mA, VCE = -1.0V 5
PNP DC Current Gain hFE 20 IC = -500mA, VCE = -2.0V 5
PNP DC Current Gain (upper limit) hFE 300 5
PNP Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA 5
PNP Collector-Emitter Saturation Voltage VCE(SAT) -0.75 V IC = -500mA, IB = -50mA 5
PNP Base-Emitter Saturation Voltage VBE(SAT) -0.75 -0.95 V IC = -150mA, IB = -15mA 5
PNP Base-Emitter Saturation Voltage VBE(SAT) -1.3 V IC = -500mA, IB = -50mA 5
PNP Output Capacitance Ccb 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 5
PNP Input Capacitance Ceb 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 5
PNP Input Impedance hie 1.5 15 k VCE = -10V, IC = -1.0mA, f = 1.0kHz 5
PNP Small Signal Current Gain hfe 60 500 5
PNP Current Gain-Bandwidth Product fT 200 MHz VCE = -10V, IC = -20mA, f = 100MHz 5
PNP Delay Time td 15 ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA 5
PNP Rise Time tr 20 ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA 5
PNP Storage Time ts 225 ns VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 5
PNP Fall Time tf 30 ns VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 5
PNP Collector-Base Voltage (4403) VCBO -40 V @TA = +25°C 2
PNP Collector-Emitter Voltage (4403) VCEO -40 V @TA = +25°C 2
PNP Emitter-Base Voltage (4403) VEBO -5 V @TA = +25°C 2
PNP Collector Current (4403) IC -600 mA @TA = +25°C 2
Power Dissipation, Total Device PD 200 mW Total device; Note 5: minimum recommended pad layout, still air 2
Thermal Resistance, Junction to Ambient RJA 625 °C/W Note 5: minimum recommended pad layout, still air 2
Operating and Storage Temperature Range TJ, TSTG -65 150 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: MMDT4413-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt4413-7-f-etched.step / mmdt4413-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt4413-7-f.step / mmdt4413-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 d7ed7afcb201445d, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF