component
MMDT3052DW
Public Made by Adomby adom
MSKSEMI Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| mmdt3052dw-etched.glb | 16d ago |
| mmdt3052dw-etched.step | 16d ago |
| mmdt3052dw-hero.glb | 16d ago |
| mmdt3052dw-hero.overlay.json | 16d ago |
| mmdt3052dw.glb | 16d ago |
| mmdt3052dw.kicad_mod | 16d ago |
| mmdt3052dw.kicad_sym | 16d ago |
| mmdt3052dw.lbr | 16d ago |
| mmdt3052dw.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
MMDT3052DW
MSKSEMI · Bipolar (BJT) · SOT-363
MMDT3052DW from MSKSEMI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (NPN); VEBO max 6 V, IC max 200 mA per transistor. |
| 2 | B1 | passive | Base of transistor 1 (NPN); VEBO max 6 V, IEBO max 100 nA at VEB = 6 V. |
| 3 | C2 | passive | Collector of transistor 2 (NPN); VCEO 50 V, VCBO 50 V, IC max 200 mA. |
| 4 | E2 | passive | Emitter of transistor 2 (NPN); VEBO max 6 V, IC max 200 mA per transistor. |
| 5 | B2 | passive | Base of transistor 2 (NPN); VEBO max 6 V, IEBO max 100 nA at VEB = 6 V. |
| 6 | C1 | passive | Collector of transistor 1 (NPN); VCEO 50 V, VCBO 50 V, IC max 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Cutoff Current | ICBO | 100 | nA | at VCB = 50 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | at VEB = 6 V | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | at IC = 100 µA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.3 | V | at IC = 100 mA, IB = 10 mA | 2 | ||
| Collector Base Voltage | VCBO | 50 | V | 2 | |||
| Collector Emitter Voltage | VCEO | 50 | V | 2 | |||
| Emitter Base Voltage | VEBO | 6 | V | 2 | |||
| Collector Current | IC | 200 | mA | 2 | |||
| Power Dissipation | Ptot | 150 | mW | 2 | |||
| Junction Temperature | Tj | 125 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 125 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
MMDT3052DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mmdt3052dw-etched.step/mmdt3052dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmdt3052dw.step/mmdt3052dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
93f527bb0b6cc788, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).