component
MMBTSA1037-Q
Public Made by Adomby adom
YFW Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMBTSA1037-Q
YFW · Bipolar (BJT) · SOT-23
MMBTSA1037-Q from YFW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; the datasheet gives -VEBO of 6 V min breakdown and -IEBO max 0.1 µA at -VEB=6V. |
| 2 | Emitter | passive | Emitter of the PNP transistor; -V(BR)EBO is 6 V min at -IE=50µA. |
| 3 | Collector | passive | Collector of the PNP transistor; -VCBO is 60 V max, -V(BR)CEO is 50 V min and -IC is 150 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | -VCBO | 60 | V | Ta = 25 ℃ | 1 | ||
| Collector Current | -IC | 150 | mA | Ta = 25 ℃ | 1 | ||
| Power Dissipation | Ptot | 200 | mW | Ta = 25 ℃ | 1 | ||
| Junction Temperature | Tj | 150 | OC | Ta = 25 ℃ | 1 | ||
| Storage Temperature Range | TS | -55 | 150 | OC | Ta = 25 ℃ | 1 | |
| DC Current Gain, group Q | hFE | 120 | 270 | - | -VCE=6V, -IC=1mA | 1 | |
| DC Current Gain, group R | hFE | 180 | 390 | - | -VCE=6V, -IC=1mA | 1 | |
| DC Current Gain, group S | hFE | 270 | 560 | - | -VCE=6V, -IC=1mA | 1 | |
| Collector Cutoff Current | -ICBO | 0.1 | µA | -VCB=60V | 1 | ||
| Emitter Cutoff Current | -IEBO | 0.1 | µA | -VEB=6V | 1 | ||
| Collector Saturation Voltage | -VCE(sat) | 0.5 | V | -IC=50mA, -IB=5mA | 1 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 60 | V | -IC=50μA | 1 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 50 | V | -IC=1mA | 1 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 | V | -IE=50μA | 1 | ||
| Transition Frequency | fT | 120 | MHz | -VCE=12V, -IC=2mA, f=30MHz | 1 |
CAD (KiCad official)
- Symbol:
MMBTSA1037-Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbtsa1037-q-etched.step/mmbtsa1037-q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbtsa1037-q.step/mmbtsa1037-q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (2 pp, sha256
d4d1b9faafa7c56f, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMBTSA1037-Q
**YFW** · Bipolar (BJT) · SOT-23
MMBTSA1037-Q from YFW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; the datasheet gives -VEBO of 6 V min breakdown and -IEBO max 0.1 µA at -VEB=6V. |
| 2 | Emitter | passive | Emitter of the PNP transistor; -V(BR)EBO is 6 V min at -IE=50µA. |
| 3 | Collector | passive | Collector of the PNP transistor; -VCBO is 60 V max, -V(BR)CEO is 50 V min and -IC is 150 mA max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Voltage | -VCBO | | | 60 | V | Ta = 25 ℃ | 1 |
| Collector Current | -IC | | | 150 | mA | Ta = 25 ℃ | 1 |
| Power Dissipation | Ptot | | | 200 | mW | Ta = 25 ℃ | 1 |
| Junction Temperature | Tj | | | 150 | OC | Ta = 25 ℃ | 1 |
| Storage Temperature Range | TS | -55 | | 150 | OC | Ta = 25 ℃ | 1 |
| DC Current Gain, group Q | hFE | 120 | | 270 | - | -VCE=6V, -IC=1mA | 1 |
| DC Current Gain, group R | hFE | 180 | | 390 | - | -VCE=6V, -IC=1mA | 1 |
| DC Current Gain, group S | hFE | 270 | | 560 | - | -VCE=6V, -IC=1mA | 1 |
| Collector Cutoff Current | -ICBO | | | 0.1 | µA | -VCB=60V | 1 |
| Emitter Cutoff Current | -IEBO | | | 0.1 | µA | -VEB=6V | 1 |
| Collector Saturation Voltage | -VCE(sat) | | | 0.5 | V | -IC=50mA, -IB=5mA | 1 |
| Collector Base Breakdown Voltage | -V(BR)CBO | 60 | | | V | -IC=50μA | 1 |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 50 | | | V | -IC=1mA | 1 |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 | | | V | -IE=50μA | 1 |
| Transition Frequency | fT | 120 | | | MHz | -VCE=12V, -IC=2mA, f=30MHz | 1 |
## CAD (KiCad official)
- Symbol: `MMBTSA1037-Q`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbtsa1037-q-etched.step` / `mmbtsa1037-q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbtsa1037-q.step` / `mmbtsa1037-q.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YFW datasheet](docs/mmbtsa1037-q-datasheet.pdf) (2 pp, sha256 `d4d1b9faafa7c56f`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmbtsa1037-q-datasheet.pdf)