main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers mmbtsa1037-q: viewers · Ray 13d ago
mmbtsa1037-q-etched.glb Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q-etched.step mmbtsa1037-q: factory component page (tier=lcsc) · Ray 13d ago
mmbtsa1037-q-hero.glb mmbtsa1037-q: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
mmbtsa1037-q-hero.overlay.json Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q.glb Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q.kicad_mod Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q.kicad_sym Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q.lbr Publish 0.1.0 · Ray 13d ago
mmbtsa1037-q.step Publish 0.1.0 · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago

MMBTSA1037-Q

YFW · Bipolar (BJT) · SOT-23

MMBTSA1037-Q from YFW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP transistor; the datasheet gives -VEBO of 6 V min breakdown and -IEBO max 0.1 µA at -VEB=6V.
2 Emitter passive Emitter of the PNP transistor; -V(BR)EBO is 6 V min at -IE=50µA.
3 Collector passive Collector of the PNP transistor; -VCBO is 60 V max, -V(BR)CEO is 50 V min and -IC is 150 mA max.

Key specifications

Parameter Value
Manufacturer YFW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage -VCBO 60 V Ta = 25 ℃ 1
Collector Current -IC 150 mA Ta = 25 ℃ 1
Power Dissipation Ptot 200 mW Ta = 25 ℃ 1
Junction Temperature Tj 150 OC Ta = 25 ℃ 1
Storage Temperature Range TS -55 150 OC Ta = 25 ℃ 1
DC Current Gain, group Q hFE 120 270 - -VCE=6V, -IC=1mA 1
DC Current Gain, group R hFE 180 390 - -VCE=6V, -IC=1mA 1
DC Current Gain, group S hFE 270 560 - -VCE=6V, -IC=1mA 1
Collector Cutoff Current -ICBO 0.1 µA -VCB=60V 1
Emitter Cutoff Current -IEBO 0.1 µA -VEB=6V 1
Collector Saturation Voltage -VCE(sat) 0.5 V -IC=50mA, -IB=5mA 1
Collector Base Breakdown Voltage -V(BR)CBO 60 V -IC=50μA 1
Collector Emitter Breakdown Voltage -V(BR)CEO 50 V -IC=1mA 1
Emitter Base Breakdown Voltage -V(BR)EBO 6 V -IE=50μA 1
Transition Frequency fT 120 MHz -VCE=12V, -IC=2mA, f=30MHz 1

CAD (KiCad official)

  • Symbol: MMBTSA1037-Q
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbtsa1037-q-etched.step / mmbtsa1037-q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbtsa1037-q.step / mmbtsa1037-q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (2 pp, sha256 d4d1b9faafa7c56f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF