component

MMBTA56LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBTA56LT3G

onsemi · Bipolar (BJT) · SOT-23

MMBTA56LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP driver transistor; the datasheet gives VCEO of -80 V, VCBO of -80 V, VEBO of -4.0 V and continuous collector current of -500 mA for the MMBTA56 family.
2 EMITTER passive Emitter terminal of the PNP driver transistor; the datasheet limits the emitter-base voltage to -4.0 V and the junction and storage temperature range to -55 to +150 °C.
3 COLLECTOR passive Collector terminal of the PNP driver transistor; the datasheet specifies a collector-emitter voltage of -80 V and continuous collector current of -500 mA for this device.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage (MMBTA56, SMMBTA56) VCEO -80 Vdc 2
Collector−Base Voltage (MMBTA56, SMMBTA56) VCBO -80 Vdc 2
Emitter−Base Voltage VEBO -4 Vdc 2
Collector Current − Continuous IC -500 mAdc 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2
Total Device Dissipation FR−5 Board PD 225 mW TA = 25°C 2
Derate above 25°C, FR−5 Board PD 1.8 mW/°C Derate above 25°C 2
Thermal Resistance, Junction−to−Ambient, FR−5 Board RθJA 556 °C/W 2
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C 2
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C 2
Thermal Resistance, Junction−to−Ambient, Alumina Substrate RθJA 417 °C/W 2
Collector−Emitter Breakdown Voltage (MMBTA56, SMMBTA56) V(BR)CEO -80 Vdc IC = −1.0 mAdc, IB = 0 3
Emitter−Base Breakdown Voltage V(BR)EBO -4 Vdc IE = −100 Adc, IC = 0 3
Collector Cutoff Current (VCE = −60 Vdc, IB = 0) ICES -0.1 Adc VCE = −60 Vdc, IB = 0 3
Collector Cutoff Current (MMBTA56, SMMBTA56) ICBO -0.1 Adc VCB = −80 Vdc, IE = 0 3
DC Current Gain hFE 100 IC = −10 mAdc, VCE = −1.0 Vdc 3
Collector−Emitter Saturation Voltage VCE(sat) -0.25 Vdc IC = −100 mAdc, IB = −10 mAdc 3
Base−Emitter On Voltage VBE(on) -1.2 Vdc IC = −100 mAdc, VCE = −1.0 Vdc 3
Current−Gain − Bandwidth Product fT 50 MHz IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz 3

CAD (KiCad official)

  • Symbol: MMBTA56LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta56lt3g-etched.step / mmbta56lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta56lt3g.step / mmbta56lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 43769f24a1b46241, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF