component
MMBTA56LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTA56LT3G
onsemi · Bipolar (BJT) · SOT-23
MMBTA56LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP driver transistor; the datasheet gives VCEO of -80 V, VCBO of -80 V, VEBO of -4.0 V and continuous collector current of -500 mA for the MMBTA56 family. |
| 2 | EMITTER | passive | Emitter terminal of the PNP driver transistor; the datasheet limits the emitter-base voltage to -4.0 V and the junction and storage temperature range to -55 to +150 °C. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP driver transistor; the datasheet specifies a collector-emitter voltage of -80 V and continuous collector current of -500 mA for this device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Voltage (MMBTA56, SMMBTA56) | VCEO | -80 | Vdc | 2 | |||
| Collector−Base Voltage (MMBTA56, SMMBTA56) | VCBO | -80 | Vdc | 2 | |||
| Emitter−Base Voltage | VEBO | -4 | Vdc | 2 | |||
| Collector Current − Continuous | IC | -500 | mAdc | 2 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Total Device Dissipation FR−5 Board | PD | 225 | mW | TA = 25°C | 2 | ||
| Derate above 25°C, FR−5 Board | PD | 1.8 | mW/°C | Derate above 25°C | 2 | ||
| Thermal Resistance, Junction−to−Ambient, FR−5 Board | RθJA | 556 | °C/W | 2 | |||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA = 25°C | 2 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | Derate above 25°C | 2 | ||
| Thermal Resistance, Junction−to−Ambient, Alumina Substrate | RθJA | 417 | °C/W | 2 | |||
| Collector−Emitter Breakdown Voltage (MMBTA56, SMMBTA56) | V(BR)CEO | -80 | Vdc | IC = −1.0 mAdc, IB = 0 | 3 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -4 | Vdc | IE = −100 Adc, IC = 0 | 3 | ||
| Collector Cutoff Current (VCE = −60 Vdc, IB = 0) | ICES | -0.1 | Adc | VCE = −60 Vdc, IB = 0 | 3 | ||
| Collector Cutoff Current (MMBTA56, SMMBTA56) | ICBO | -0.1 | Adc | VCB = −80 Vdc, IE = 0 | 3 | ||
| DC Current Gain | hFE | 100 | IC = −10 mAdc, VCE = −1.0 Vdc | 3 | |||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc | IC = −100 mAdc, IB = −10 mAdc | 3 | ||
| Base−Emitter On Voltage | VBE(on) | -1.2 | Vdc | IC = −100 mAdc, VCE = −1.0 Vdc | 3 | ||
| Current−Gain − Bandwidth Product | fT | 50 | MHz | IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz | 3 |
CAD (KiCad official)
- Symbol:
MMBTA56LT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta56lt3g-etched.step/mmbta56lt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta56lt3g.step/mmbta56lt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
43769f24a1b46241, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).