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MMBTA42_R1_00001

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PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBTA42_R1_00001

PANJIT International · Bipolar (BJT) · SOT-23

MMBTA42_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives device-level limits only, with emitter-base voltage VEBO of 6 V.
2 EMITTER passive Emitter terminal of the NPN transistor; device-level limits are emitter-base voltage VEBO of 6 V and VCE(SAT) of 0.5 V max at IC=20 mA, IB=2 mA.
3 COLLECTOR passive Collector terminal of the NPN transistor; device-level limits are VCEO of 300 V, VCBO of 300 V and continuous collector current IC of 500 mA.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 300 V IC=1mA, IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100A, IE=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100A, IC=0 2
Collector Cut-off Current ICBO 100 nA VCB=200V, IE=0V 2
Emitter Cut-off Current IEBO 100 nA VCE=6V, IC=0 2
DC Current Gain hFE 25 - VCE=10V, IC=1.0mA 2
DC Current Gain hFE 40 - VCE=10V, IC=10mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC=20mA, IB=2mA 2
Base-Emitter Saturation Voltage VBE(SAT) 0.9 V IC=20mA, IB=2mA 2
Collector-Base Capacitance CCBO 3 pF VCB=20V, IE=0, f=1MHz 2
Collector Gain-Bandwidth Product FT 50 MHZ IC=10mA, VCE=20V, f=100MHZ 2
Collector-Emitter Voltage VCEO 300 V 1
Collector-Base Voltage VCBO 300 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current Continuous IC 500 mA 1
Max Power Dissipation PTOT 250 mW Note 1: transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. 1
Junction Temperature TJ -55 150 OC 1
Storage Temperature TSTG -55 150 OC 1
Thermal Resistance, Junction to Ambient RθJA 500 OC/W 1

CAD (KiCad official)

  • Symbol: MMBTA42_R1_00001
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta42-r1-00001-etched.step / mmbta42-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta42-r1-00001.step / mmbta42-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (6 pp, sha256 7381e8995e9ac156, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF