component
MMBTA42_R1_00001
Public Made by Adomby adom
PANJIT International Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBTA42_R1_00001
PANJIT International · Bipolar (BJT) · SOT-23
MMBTA42_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives device-level limits only, with emitter-base voltage VEBO of 6 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; device-level limits are emitter-base voltage VEBO of 6 V and VCE(SAT) of 0.5 V max at IC=20 mA, IB=2 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; device-level limits are VCEO of 300 V, VCBO of 300 V and continuous collector current IC of 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 300 | V | IC=1mA, IB=0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 300 | V | IC=100A, IE=0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=100A, IC=0 | 2 | ||
| Collector Cut-off Current | ICBO | 100 | nA | VCB=200V, IE=0V | 2 | ||
| Emitter Cut-off Current | IEBO | 100 | nA | VCE=6V, IC=0 | 2 | ||
| DC Current Gain | hFE | 25 | - | VCE=10V, IC=1.0mA | 2 | ||
| DC Current Gain | hFE | 40 | - | VCE=10V, IC=10mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.5 | V | IC=20mA, IB=2mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.9 | V | IC=20mA, IB=2mA | 2 | ||
| Collector-Base Capacitance | CCBO | 3 | pF | VCB=20V, IE=0, f=1MHz | 2 | ||
| Collector Gain-Bandwidth Product | FT | 50 | MHZ | IC=10mA, VCE=20V, f=100MHZ | 2 | ||
| Collector-Emitter Voltage | VCEO | 300 | V | 1 | |||
| Collector-Base Voltage | VCBO | 300 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current Continuous | IC | 500 | mA | 1 | |||
| Max Power Dissipation | PTOT | 250 | mW | Note 1: transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. | 1 | ||
| Junction Temperature | TJ | -55 | 150 | OC | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | OC | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 500 | OC/W | 1 |
CAD (KiCad official)
- Symbol:
MMBTA42_R1_00001 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbta42-r1-00001-etched.step/mmbta42-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbta42-r1-00001.step/mmbta42-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (6 pp, sha256
7381e8995e9ac156, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).